Projection exposure apparatus and method, photomask, and method for manufacturing substrate
A technology of exposure device and exposure method, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, etc., and can solve the problems of poor pattern coincidence accuracy, inability to deal with complex deformation of projection area, and position deviation of through holes, etc.
Active Publication Date: 2016-03-09
ORC MFG
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Problems solved by technology
In this case, even if alignment is performed by the GA method in order to correct the alignment error of the projection area, it cannot cope with the complex deformation of the projection area itself.
As a result, positional deviation of via holes may occur between layers, and pattern overlapping accuracy may deteriorate.
Method used
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Embodiment Construction
[0035]Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0036] figure 1 It is a schematic block diagram of the projection exposure apparatus which is 1st Embodiment. Hereinafter, an exposure process will be described on the premise that a first-layer pattern is formed on a substrate, and a mask pattern is overlapped with a projection region of the substrate after the second layer.
[0037] The projection exposure apparatus 10 is an exposure apparatus that transfers a mask pattern formed on a reticle (photomask) R to a substrate (work substrate) W in a step-and-repeat manner, and includes a light source 20 such as a discharge lamp, a projector, etc. Optical system 34. The reticle R is made of a quartz material or the like, and forms a mask pattern having a light-shielding region. Here, as the substrate W, a substrate made of silicon, ceramics, glass, or resin (for example, an interposer substrate) is used.
[0038] The ill...
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The invention relates to a projection exposure apparatus and method, a photomask, and a method for manufacturing a substrate. The projection exposure apparatus can make the mask pattern to be aligned with high precision and be transfered to a projection area of the substrate. The mask patterns corresponding to a plurality of projection areas in the transformation way is generated on the middle mask, according to the step and repeat way, the mask patterns are transfered to the substrate comprising the plurality of projection areas. According to a global alignment mode, a measuring sample uses position coordinates of an alignment mark to detect the form error of the projection area according to the form error of the a globle alignment area. In addition, mask patterns with shapes correponding to the form error, that is, the form error and the mask pattern are in same trend range of the transformation condition, are selected.
Description
technical field [0001] The present invention relates to a projection exposure apparatus for transferring a pattern formed on a photomask such as a reticle to a substrate, and particularly relates to alignment (position alignment) of a deformed substrate. Background technique [0002] Devices such as semiconductor elements, liquid crystal display elements, and packaging substrates manufactured using projection exposure equipment often have a multilayer structure, and the substrate is manufactured by superimposing and transferring patterns. When transferring the pattern of the second layer or later on the substrate, it is necessary to accurately align the shot region formed on the substrate with the pattern image on the mask, that is, the position of the photomask and the substrate. alignment. [0003] As a position alignment method, a global alignment (GA) method is known. Here, a plurality of projection areas are defined along a grid on the substrate, and alignment marks a...
Claims
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IPC IPC(8): G03F7/20
Inventor 中泽朗
Owner ORC MFG