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Heating device used in mocvd reactor

A heating device and reactor technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of short service life and unsatisfactory protection effect of the heater, and achieve extended service life and stable use. Reliable, simple and compact effect

Active Publication Date: 2018-05-15
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the protective gas that is passed into the heater area is generally passed into the bottom area of ​​the heater through a gas pipe. After the protective gas comes out of the gas pipe, it diffuses to form an atmosphere that protects the heater, so the protective effect is not good. Ideal, heater life is short

Method used

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  • Heating device used in mocvd reactor
  • Heating device used in mocvd reactor
  • Heating device used in mocvd reactor

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Experimental program
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Embodiment Construction

[0025] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0026] Figure 1 to Figure 5 An embodiment of the heating device used in the MOCVD reactor of the present invention is shown, including a slide tray 1, a heat-insulating shield plate 2 and a support base plate 3, the three surround and form a heating inner cavity 4, and the support base plate 3 There are a plurality of support columns 31 located in the heating inner cavity 4, and the heating inner cavity 4 is evenly spaced from bottom to top with a plurality of shielding layer plates 5 sleeved on the support columns 31, and the top of the support column 31 is equipped with a top gas injection plate 6. The top gas injection plate 6 is equipped with a heating assembly 7, the support base 3 is pierced with an air intake pipe 8 communicating with the top gas injection plate 6, and the support base 3 is also equipped with a bottom gas tube...

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Abstract

The invention discloses a heating device for an MOCVD reactor. The heating device comprises a sheet carrying disc, heat insulation shielding boards and a supporting bottom board. An inner heating cavity is defined by the sheet carrying disc, the heat insulation shielding boards and the supporting bottom board. Multiple supporting columns located in the inner heating cavity are arranged on the supporting bottom board. Multiple shielding layer boards are evenly arranged in the inner heating cavity from bottom to top at intervals, wherein the supporting columns are sleeved with the shielding layer boards. The tops of the supporting columns are provided with a top gas jetting board. A heating assembly is arranged on the top gas jetting board. Gas inflow pipes communicated with the top gas jetting board penetrate the supporting bottom board. A bottom gas jetting board communicated with the inner heating cavity is further arranged on the supporting bottom board. The heating device has the beneficial effects of being simple, compact, stable and reliable in use and capable of prolonging the service life of the heating assembly.

Description

technical field [0001] The invention mainly relates to the heating technology in the MOCVD equipment, in particular to a heating device used in the MOCVD reactor. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, Metal Organic Chemical Vapor Deposition equipment, plays an irreplaceable role in the semiconductor industry, especially in the LED industry, and is a particularly critical equipment. The equipment integrates various disciplines such as computational fluid dynamics, heat transfer, system integration control, and compound growth. It is a high-tech and high-tech equipment; it is a strategic high-tech semiconductor that breaks through the bottleneck of industrial development and improves the industrial level. equipment. [0003] Due to the outstanding advantages of MOCVD in the growth of semiconductor thin films, MOCVD has also shown good application prospects in the growth of ferroelectric thin films and molybdenum mate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/46
CPCC23C16/46
Inventor 罗才旺魏唯陈特超刘欣王慧勇
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP