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Power device and manufacturing method thereof

A technology of power devices and impurity concentration, applied in semiconductor devices, electrical components, transistors, etc., can solve problems such as EMI noise increase, and achieve the effect of low EMI noise and fast switching characteristics

Active Publication Date: 2021-02-19
FAIRCHILD KOREA SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, this fast switching characteristic of FS-IGBT may lead to the disadvantage of increased EMI noise during turn-off switching

Method used

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  • Power device and manufacturing method thereof
  • Power device and manufacturing method thereof
  • Power device and manufacturing method thereof

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Embodiment Construction

[0056] Certain exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings, in order to facilitate a comprehensive understanding of the constitution and effects of the present invention. However, the present invention is not limited to the embodiments disclosed herein, but can be implemented in various configurations with various modifications. Therefore, it is apparent that the exemplary embodiments of the present invention are provided to complete the present invention and fully inform those skilled in the art of the scope of the present invention. For convenience of illustration, some elements may be exaggerated from actual size, and corresponding elements may be shown on an enlarged or reduced scale.

[0057] When an element is referred to as being "on" or "in contact with" another element, it will be understood that the element may be in direct contact with or connected to the other element or via another...

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Abstract

The invention provides a power device and a manufacturing method thereof. A power device having fast switching characteristics while keeping EMI noise to a minimum, and a method of manufacturing such a power device are provided. The power device includes: a first field stop layer having a first conductivity type; a first drift region formed on the first field stop layer and having a a first conductivity type lower than the impurity concentration of the first field stop layer; a buried region formed on the first drift region and having an impurity concentration higher than that of the first drift region the first conductivity type; a second drift region formed on the buried region; a power device unit formed at an upper portion of the second drift region; and a collector region, the collector region is formed under the first field stop layer.

Description

[0001] Cross references to related patent applications [0002] This patent application claims Continuation-in-Part of U.S. Patent Application No. 13 / 868,629 filed with the USPTO on April 23, 2013 and Continuation-in-Part of U.S. Patent Application No. 14 / filed with the USPTO on June 26, 2014 316,248 and priority of U.S. Provisional Application No. 62 / 013,304 filed with the U.S. Patent and Trademark Office on June 17, 2014, and Korean Patent Application No. 10-2015-0078244 filed with the Korean Intellectual Property Office on June 2, 2015 , the disclosures of these applications are incorporated herein by reference in their entirety. technical field [0003] The present invention relates to a power device and a method of manufacturing the same, and more particularly, to a power device capable of minimizing electromagnetic interference (EMI) noise and a method of manufacturing the same. Background technique [0004] Recently, insulated-gate bipolar transistors (IGBTs) have g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/66
CPCH01L29/0684H01L29/66333H01L29/7398
Inventor 全在德金永哲朴庆锡金镇明崔嵘澈
Owner FAIRCHILD KOREA SEMICON