Super-junction IGBT (Insulated Gate Bipolar Translator) with low turn-off current trailing and manufacturing method thereof
A technology for turning off current and super junction, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of prolonging the turn-off process, increasing the turn-off loss, etc., so as to reduce the current tail and reduce the turn-off. The effect of energy loss
Pending Publication Date: 2022-04-12
深圳市千屹芯科技有限公司
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Problems solved by technology
Obviously, the above tail current prolongs the turn-off process of the IGBT, thereby increasing the turn-off loss
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Embodiment 1
[0065] A structure of a super junction IGBT provided in this embodiment, such as figure 2 As shown, it includes a P-collector region 1, an N-drift region 2, an epitaxial layer 4, and a P well region 7 that are in electrical contact in sequence, and a plurality of P-type columnar superjunctions are distributed in the N-drift region 2 Structure 3, the upper end of the P-type columnar structure 3 is in electrical contact with the P well region 7, the lower end is in electrical contact with one end of the N-type highly doped region 13, and the other end of the N-type highly doped region 13 is in electrical contact with the The N-drift region 2 is in electrical contact, and the side walls of the P-type columnar structure 3 and the highly doped region 13 are in electrical contact with the N-drift region 2; the P well region 7 is provided with a penetrating epitaxial The gate 6 of layer 4, the sidewall of the gate 6 is covered with an insulating gate oxide layer 5, the upper half of...
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The invention discloses a super junction IGBT (Insulated Gate Bipolar Translator) with low turn-off current trailing and a manufacturing method thereof. The super junction IGBT comprises a collector region, a drift region, an epitaxial layer and a well region; a super junction structure is distributed in the drift region, and the super junction structure comprises a columnar structure; emitters are formed at the upper part of the well region, grids are distributed in the epitaxial layer and the well region, each emitter is electrically isolated around the upper part of the corresponding grid, and the lower part of each grid enters the epitaxial layer; the lower end of the collector region is electrically combined with the collector; the collector region, the well region and the columnar structure are of a first conductive type, and the drift region, the epitaxial layer and the emitter are of a second conductive type; the lower end of the columnar structure is further in electric contact with a highly-doped region of the second conduction type, and the highly-doped region is distributed in the drift region and is not in contact with the collector region. According to the super junction IGBT provided by the invention, the turn-off current trailing is reduced, and the turn-off energy loss is further reduced.
Description
technical field [0001] The invention relates to the technical field of surface modification, in particular to a super-junction IGBT with low off-current tailing and a manufacturing method thereof. Background technique [0002] IGBT is the abbreviation of the English word Insulated Gate Bipolar Transistor, that is, an insulated gate bipolar transistor. From a functional point of view, the IGBT is a circuit switch, the advantage is that it is controlled by voltage, the saturation voltage drop is small, and the withstand voltage is high. It can be applied to strong electricity with a voltage of tens to hundreds of volts and a current of tens to hundreds of amperes. And the IGBT does not use mechanical buttons, it is controlled by a computer. [0003] As a new generation of high-speed IGBT design technology, super-junction IGBT has been experimentally verified for its excellent electrical performance. For example, the device structure of a super junction IGBT such as figure ...
Claims
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IPC IPC(8): H01L29/06H01L29/739H01L21/331
Inventor 祁金伟
Owner 深圳市千屹芯科技有限公司