Phase change memory and manufacturing method thereof
A phase change and memory technology, applied in the field of phase change memory and its manufacturing, can solve the problems of high difficulty in etching process and difficulty in accurately controlling the characteristic size of columnar heaters, etc.
Active Publication Date: 2016-03-23
JIANGSU ADVANCED MEMORY SEMICON CO LTD +1
View PDF7 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Although the lithography and etching process can be used to form a columnar heater with a small top area, so that the top surface of the columnar heater is in contact with the phase change material, but the lithography process still has its limits, and the etching process is also very difficult. Therefore, it is not easy to accurately control the characteristic size of the columnar heater
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] Several embodiments of the present invention will be disclosed below with the accompanying drawings. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some known and conventional structures and elements will be shown in a simple and schematic manner in the drawings.
[0024] As mentioned in the prior art, the contact area between the heater and the phase change material in the existing phase change memory is relatively large, so that the reset current of the phase change memory is relatively high. Although the lithography and etching process can be used to form a columnar heater with a small top area, so that the top surface of the columnar heater is in contact w...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a phase change memory and a manufacturing method thereof. The phase change memory comprises a driving element, a lower electrode, a first insulating layer, an upper electrode, an arc heater and an annular phase change layer, wherein the lower electrode is coupled with the driving element; the first insulating layer is located above the lower electrode; the upper electrode is located above the first insulating layer; the arc heater is embedded into the first insulating layer; the annular phase change layer surrounds the first insulating layer and the upper electrode; and the annular phase change layer is contacted with one side surface of the arc heater. The contact area between the arc heater and the annular phase change layer is very small, so that the reset current of the phase change memory is very low.
Description
technical field [0001] The invention relates to a phase-change memory and a manufacturing method thereof. Background technique [0002] Electronic products (such as mobile phones, tablet computers, and digital cameras) often have memory elements for storing data. It is known that memory devices can store information through storage nodes on the memory unit. Among them, the phase change memory utilizes the resistance state (such as high resistance value and low resistance value) of the memory element to store information. The memory device can have a material that can switch between different phases (eg, crystalline and amorphous). The different phase states make the memory cells have resistance states with different resistance values for representing different values of stored data. [0003] When the phase change memory cell is in operation, an electric current can be applied to increase the temperature of the memory element to change the phase state of the material. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/80H10N70/821H10N70/8613H10N70/011
Inventor 苏水金
Owner JIANGSU ADVANCED MEMORY SEMICON CO LTD