reverse conducting insulated gate bipolar transistor

Abstract

The invention relates to a new structure reverse conducting insulated gate bipolar transistor. The new structure reverse conducting insulated gate bipolar transistor comprises a substrate, an n type drift region in the substrate, grid electrodes and emitting electrodes arranged on the front side of the substrate, and a collector electrode arranged on the back side of the substrate. The grid electrodes and the emitting electrodes are arranged at intervals on the surface of the substrate. The bottom part of each grid electrode is provided with an insulated layer. The front surface of the substrate is provided with n type carrier storage layers connected with the n type drift region. The doping concentration of each n type carrier storage layer is larger than the doping concentration of the n type drift region. The n type carrier storage layers are internally provided with p well regions. The p well regions are internally provided with n type doped regions. The emitting electrodes are arranged right above the p well regions. The n type doped regions extend to the adjacent grid electrodes and the bottom parts of the insulated layers. According to the invention, the problem of insufficient conductivity modulation caused by single-pole carriers in the conducting process of an RC-IGBT device is relieved, so that the Snapback phenomenon is inhibited, and the conduction resistance of the device is lowered.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a reverse conduction insulated gate bipolar transistor. Background technique [0002] Since the insulated gate bipolar transistor (IGBT) was commercialized in 1986, it has played an increasingly important role in power switching devices, and when many power devices are used as switching devices, a freewheeling diode will be connected in reverse parallel (Free Wheeling Diode). Therefore, in the IGBT module design, a freewheeling diode chip is often placed next to the IGBT chip, and then packaged together to meet the purpose of use. After becoming more and more familiar with the working principle of IGBT devices and the corresponding processing technology has become more and more refined, it has been found that the reverse freewheeling diode can be integrated on the IGBT chip, that is, the IGBT and the reverse freewheeling diode share the same silicon chip. It is used as an IGBT when the...

AI Technical Summary

Problems solved by technology

This negative resistance phenomenon will have adverse effects on the operation and stability of the device when the device is operating at low temperature, so it is necessary to further optimize the device structure to alleviate or fundamentally solve this problem

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