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Image sensor pixel cell with non-destructive readout

A technology for pixel unit and image magnification, which is applied in the field of image sensors and can solve problems such as reducing light sensitivity

Active Publication Date: 2018-08-24
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, the charge in the photodiode disappears after each readout, which reduces light sensitivity compared to pixel cells that can accumulate light during the entire frame time

Method used

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  • Image sensor pixel cell with non-destructive readout
  • Image sensor pixel cell with non-destructive readout
  • Image sensor pixel cell with non-destructive readout

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Embodiment Construction

[0014] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the specific details need not be employed to practice the present invention. In other instances, well-known materials or methods have not been described in detail to avoid obscuring the present invention.

[0015] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example includes In at least one embodiment of the invention. Thus, appearances of the phrases "in one embodiment," "in an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, particular features, structures or characteristics ma...

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Abstract

The present application relates to an image sensor pixel cell with non-destructive readout. A pixel cell includes a photodiode coupled to photogenerate an image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode by the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to the output of the amplifier transistor to selectively output the amplified image data to a column bit line coupled to the row select transistor.

Description

technical field [0001] The present invention generally relates to image sensors. More specifically, examples of the invention relate to circuitry for reading out image data from image sensor pixel cells. Background technique [0002] Image sensors have become ubiquitous. It is widely used in digital cameras, cellular phones, security cameras, as well as in medical, automotive and other applications. The technology used to fabricate image sensors, and complementary metal-oxide-semiconductor (CMOS) image sensors in particular, has continued to advance rapidly. In addition, increasing demands for higher resolution and lower power consumption have prompted further miniaturization and integration of these image sensors. [0003] As pixel cells become smaller, the need for image sensors to operate over a wide range of lighting conditions that vary from low-light conditions to bright-light conditions becomes increasingly difficult to fulfill. This performance capability is ofte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14612H01L27/1463H01L27/14643H04N23/71H04N25/53H04N25/533H04N25/77H04N25/771H01L27/14831
Inventor 约翰内斯·索尔胡斯维克多米尼克·马塞提
Owner OMNIVISION TECH INC