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A kind of temperature measuring chip and the preparation method of temperature measuring chip

A chip and glass sheet technology, applied in the field of temperature measurement chip and temperature measurement chip preparation, can solve problems such as temperature measurement failure, achieve the effect of improving accuracy, improving temperature measurement accuracy, and improving reliability

Active Publication Date: 2019-08-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0005] The present invention aims to solve the technical problems existing in the prior art, and provides a temperature-measuring chip and a method for preparing the temperature-measuring chip, which can solve the problem of temperature measurement failure caused by ignition, thereby improving the reliability of temperature measurement; Moreover, since the temperature measuring device is arranged inside the temperature measuring wafer, the actual temperature of the wafer can be obtained more accurately, thereby improving the accuracy of temperature measurement

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  • A kind of temperature measuring chip and the preparation method of temperature measuring chip
  • A kind of temperature measuring chip and the preparation method of temperature measuring chip
  • A kind of temperature measuring chip and the preparation method of temperature measuring chip

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preparation example Construction

[0034] As another solution, the present invention also provides a method for preparing a temperature measuring chip. Figure 4 For the flow chart of the preparation method of the temperature measuring wafer provided by the embodiment of the present invention, please refer to Figure 4 , the preparation method of the temperature measuring wafer provided in this embodiment at least includes the following steps:

[0035] Step S1, preparing one or more grooves on the back side of the wafer;

[0036] Step S2, setting the temperature measuring piece in the groove, and making the temperature reading surface of the temperature measuring piece face down, specifically, the temperature measuring piece includes temperature measuring test paper, etc.;

[0037] Step S3, bonding the glass sheet to the back of the wafer.

[0038] Specifically, in step S1, an etching method or a chemical etching method is used to prepare a groove on the back side of the wafer to accommodate the temperature mea...

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Abstract

The invention provides a temperature measurement wafer and a preparation method of the same. The temperature measurement wafer comprises a wafer and a glass sheet, wherein one or more grooves are arranged on the back side of the wafer, temperature measurement elements are arranged in the grooves, temperature display surfaces of the temperature measurement elements face downwards, and the glass sheet is pasted on the back side of the wafer. With the temperature measurement wafer provided by the invention, the problem of temperature measurement failure caused by sparking can be solved, so that the temperature measurement reliability can be improved; and moreover, the temperature measurement elements are arranged in the temperature measurement wafer, thus, the actual temperature of the wafer can be accurately acquired, and the accuracy of temperature measurement can be improved.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment manufacturing, and in particular relates to a temperature-measuring chip and a method for preparing the temperature-measuring chip. Background technique [0002] At present, in the field of semiconductors, methods for preparing thin films include spray coating, chemical vapor deposition, evaporation coating, and magnetron sputtering. Among them, the magnetron sputtering method is widely used due to its advantages of stable process and simple structure. In the through-silicon via (hereinafter referred to as TSV) process, in order to fill the via hole with high aspect ratio, a negative bias voltage is applied to the susceptor to attract the plasma to move towards the wafer on it, which increases the energy of the plasma bombarding the wafer. Large, thus increasing the heat generated on the wafer, which will cause damage to the wafer when the heat accumulates to a certain extent. [0003] In ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
Inventor 王宽冒
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD