IGBT device and manufacturing method for improving field strength uniformity of active region and terminal connection region
A technology of terminal connection and active area, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of slow IGBT switching speed, reduce IGBT reliability, reduce transmission speed, etc., and reduce switching speed. Losses, Enhanced Reliability, Increased Switching Speed Effects
Active Publication Date: 2019-04-05
STATE GRID CORP OF CHINA +2
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Problems solved by technology
[0004] The connection between the emitter aluminum lead area 01 and the first metal field plate 05 of the terminal protection ring in the prior art is connected by the aluminum line 10. This aluminum line connection method leads to the active area 08 in the aluminum line area and the terminal 07 The field strength in the connection area is too large, and the field strength of the IGBT active area 08 and the connection area of the terminal 07 are inconsistent, and dynamic avalanche is prone to occur in the area where the field strength is too large, thereby reducing the reliability of the IGBT, and the aluminum lead 03 in the gate aluminum lead area is covered by aluminum The connection 10 is split, and the transmission speed of the IGBT gate voltage is reduced, resulting in a slower switching speed of the IGBT
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[0040] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0041] The technical terms are explained in detail below:
[0042] Aluminum lead area: a window opened on the passivation layer of the chip, on which a metal wire is welded during packaging, and connected to the pin to lead out the potential. Specifically, there are gate aluminum lead area and emitter aluminum lead area.
[0043] Gate aluminum lead area: In order to ensure that the edge cells are turned on or off at the same time, the edge cells are usually surrounded by metal rings, and then the gate potential is transmitted through polysilicon.
[0044] Active area: The area where the silicon wafer is used as an active device. For IGBT devices, it mainly refers to the cell area.
[0045] Terminal P-type field limiting ring: a region formed by doping with P-type impurities.
[0046] The invention provides an IGBT de...
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The invention relates to an IGBT (Insulated Gate Bipolar Transistor) device with improved field intensity uniformity of an active area and a terminal connection area and a manufacturing method thereof. The IGBT device includes an emitter aluminum lead area, a gate aluminum lead area, an active area, a terminal P-type field limiting ring, a field oxide layer, a gate Bus area and a terminal area. The gate aluminum lead area is in a corner position of the device. The emitter lead area is in the active area. The gate Bus area surrounds the active area. The terminal area is at the periphery of the gate Bus area. By improving the design of the traditional connection structure between an emitter and a first metal field plate and a first gate field plate, the field intensity uniformity of the active area and the terminal connection area of the IGBT device is improved, and thus, the overall field intensity uniformity of the IGBT device is better. The field intensity uniformity of the active area and the terminal connection area of the IGBT is improved, the integrity of an aluminum lead of the gate aluminum lead area is ensured, transmission of gate voltage is improved, and therefore, the switching speed of the IGBT is improved and the switching loss is reduced.
Description
technical field [0001] The invention relates to an IGBT device and a manufacturing method thereof, in particular to an IGBT device and a manufacturing method for improving the field strength uniformity of an active region and a terminal connection region. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) insulated gate bipolar transistor is a new type of composite power device developed on the basis of MOSFET (Metal Oxide Field Effect Transistor) and GTR (Power Transistor). It has the advantages of low power, simple drive circuit, high switching speed, and low switching loss, and has the advantages of low on-voltage, large on-state current, and strong current handling capability of bipolar transistors. Widely used in induction cooker, automotive electronics, frequency converter, power system, electric welding machine, switching power supply and other circuits, it puts forward very high requirements on the reliability and switching speed of IGBT. [0003...
Claims
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IPC IPC(8): H01L29/739H01L29/08H01L21/335
Inventor 何敏赵哿金锐刘江王耀华高明超
Owner STATE GRID CORP OF CHINA