Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for dynamically adjusting memory monitoring threshold value

A technology for dynamic adjustment and monitoring of valves, applied in hardware monitoring, instruments, electrical and digital data processing, etc., can solve problems such as inconvenient adjustment, and achieve the effect of avoiding adverse effects

Inactive Publication Date: 2016-05-18
LANGCHAO ELECTRONIC INFORMATION IND CO LTD
View PDF6 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The memory ECC monitoring threshold is generally written into the BIOS, or adjusted through the BIOSsetup option, which is inconvenient and flexible to adjust according to business scenarios

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for dynamically adjusting memory monitoring threshold value

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] A method for dynamically adjusting the memory monitoring threshold of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] A method to dynamically adjust the memory monitoring threshold. Through the BMC (Baseboard Management Controller) baseboard management controller, the number of memory correctable ECC (Error-Correcting Code) errors recorded by the CPU is obtained; according to business requirements for memory correctable ECC errors, set Set the monitoring threshold. When the number of correctable ECC errors in the monitored memory exceeds the threshold, an alarm will be triggered automatically and the system administrator will be prompted to take corresponding measures; the implementation steps are: 1), set parameters; 2), execute the script ;3), start monitoring; 4), judge whether the threshold is exceeded; 5), troubleshoot.

[0018] Further, the method obtains the number of correctable ECC errors recorded ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for dynamically adjusting a memory monitoring threshold value. The quantity of memory correctable ECC (Error-Correcting Code) errors recorded by a CPU is obtained through a BMC (Baseboard Management Controller); a monitoring threshold value is set according to the demand of a service to the memory correctable ECC errors; when monitoring that the quantity of the memory correctable ECC errors exceeds the threshold value, an alarm is automatically triggered; a system manager is reminded of taking corresponding measures. According to the method of the invention, the real time quantity of the memory correctable ECC errors can be obtained through the BMC out-band; the alarm is triggered according to the set threshold value; the system manager is reminded of taking corresponding measures so as to timely replace the memory with a hidden danger; and the bad effect on the service is prevented.

Description

technical field [0001] The invention relates to server memory monitoring, in particular to a method for dynamically adjusting a memory monitoring threshold. Background technique [0002] With the reduction of the particle manufacturing process of each memory manufacturer, the ability of the capacitor to store charges becomes smaller, the influence and interference become larger, the control of the MOS tube is weak, and the leakage current is prone to occur. Especially with the continuous increase of the capacity of a single memory chip, the judgment of the CELL capacitance level in the chip is more susceptible to disturbance, and the ECC problem has become more and more obvious in recent years. [0003] A small amount of correctable ECC errors will not affect the stable operation of the system and will not cause system downtime. However, when frequent correctable ECC errors occur, if they are not replaced according to the monitoring threshold, the stable operation of the sy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/30
CPCG06F11/3034
Inventor 李双星
Owner LANGCHAO ELECTRONIC INFORMATION IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com