Light-emitting diode epitaxial wafer with novel quantum well and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer with a novel quantum well and a preparation method thereof, belonging to the field of light-emitting diodes. The light-emitting diode epitaxial wafer includes: a substrate, and a u-type GaN layer, an N-type GaN layer, a multi-quantum well active layer and a P-type GaN carrier layer that are sequentially covered on the substrate, and the multi-quantum well active layer Including alternately grown M+N quantum well layers and M+N quantum barrier layers, the quantum well layer is an InGaN well layer, and the quantum barrier layer is a GaN barrier layer; the M+N quantum well layer close to the N-type GaN layer The thickness of the M quantum well layers changes gradually, and among the M quantum well layers close to the N-type GaN layer among the M+N quantum well layers, the thickness of the quantum well layer close to the N-type GaN layer is greater than that close to the P-type GaN layer. The thickness of the quantum well layer of the carrier layer, the thickness of the N quantum well layers close to the P-type GaN carrier layer among the M+N quantum well layers is less than the thickness of the M quantum well layers, and both M and N are greater than A positive integer of 1, and the difference between M and N is 0.

Description

technical field [0001] The invention relates to the field of light emitting diodes (English Light Emitting Diode, referred to as LED), in particular to a light emitting diode epitaxial wafer with a novel quantum well and a preparation method thereof. Background technique [0002] LED is known as the most promising green lighting source in the 21st century because of its advantages such as high brightness, low heat, long life, non-toxicity, and recyclability. As the most important category of LEDs, GaN-based LEDs are widely used in many fields. The existing GaN-based LED epitaxial wafer mainly includes a substrate, a buffer layer, an N-type GaN layer, a multi-quantum well active layer, and a P-type GaN carrier layer. [0003] During the working process of GaN-based LEDs, the electrons generated in the N-type GaN layer and the holes generated in the P-type GaN carrier layer migrate to the multi-quantum well active layer under the action of an electric field, and are formed in...

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Problems solved by technology

[0005] As the working current of GaN-based LEDs increases, the current density increases accordingly. In this high current density scenario, the electrons injected into the MQW active layer also increase, resulting in the failure of some electrons to interact with the holes. The multi-quantum well active layer recombines and migrates to the P-type GaN carrier layer, resulting in an increase in the degree of electron leakage, which makes the luminous efficiency of the LED chip decrease under the condition of high current density.

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