A vertical GaN-based heterojunction semiconductor device and its manufacturing method

A GaN-based, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that the utilization rate of chip area is not as effective as that of vertical high-voltage devices, and the utilization rate of surface area is not much improved, etc. problem, to achieve the effect of simple manufacturing method, effective power, and easy realization
CN105679823BActive Publication Date: 2019-09-03M MOS SEMICON HK
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
M MOS SEMICON HK
Publication Date
2019-09-03

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Abstract

The invention provides a longitudinal gallium nitride-based heterojunction semiconductor device and a manufacturing method thereof. The device comprises a substrate, a metal layer and a longitudinal gallium nitride-based heterojunction, wherein the longitudinal gallium nitride-based heterojunction is located at a GaN side of the heterojunction and comprises a longitudinal two-dimensional electron gas; and the longitudinal two-dimensional electron gas serves as a current channel from the surface to the bottom surface when the device is switched on. The method comprises the following steps: depositing unintentionally doped gallium nitride buffer layer on the surface of the substrate; etching the unintentionally doped gallium nitride buffer layer by a lithography mask; depositing an aluminum gallium nitride barrier layer to form the longitudinal gallium nitride-based heterojunction; and forming a metal layer on the surface by the lithography mask. The device chip provided by the invention can provide relatively high and effective power per unit area, so that the product has relatively good cost performance; and the manufacturing method is simple and easy to achieve.
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Description

technical field

[0001] The invention relates to a semiconductor device, in particular to a gallium nitride semiconductor device. Background technique

[0002] Third-generation semiconductor materials, including CdS, ZnO, SiC, GaN, diamond, etc. The bandgap of these semiconductor materials is greater than 2.2eV. In terms of electronic devices, the research on SiC and GaN is relatively mature, and it is currently a hot spot in the field of semiconductor materials and device research in the world.

[0003] Gallium nitride (GaN) has a band gap of 3.4eV. The wide band gap enables GaN materials to withstand higher operating temperatures and also enables GaN materials to have a larger breakdown electric field. A larger breakdown electric field means that the device can withstand Higher operating voltage can improve the power characteristics of the device. GaN also has high electron saturation drift velocity and high thermal conductivity. Generally speaking, GaN is an excellent ma...

Claims

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