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NPSS-Based Narrow Bandpass Gan-Based MSM Structure UV Detector

An ultraviolet detector and narrow-band technology, which is applied in the field of ultraviolet detectors, can solve the problems of epitaxial material quality influence, detector suppression ratio and other problems, and achieve the effect of small defect density, small dark current and stable performance

Active Publication Date: 2017-08-01
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this structural device has a good UV / visible light suppression ratio, this structure cannot solve the problem of the short-wavelength suppression ratio of the detector, and the quality of the epitaxial material is also affected by the substrate technology.

Method used

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  • NPSS-Based Narrow Bandpass Gan-Based MSM Structure UV Detector
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  • NPSS-Based Narrow Bandpass Gan-Based MSM Structure UV Detector

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Embodiment Construction

[0020] like figure 1 As shown, a kind of NPSS-based narrow-band-pass GaN-based MSM structure ultraviolet detector of the present invention comprises from bottom to top: substrate 1, buffer layer 2, N-type absorption layer 3 and Schottky electrode 6; There is a gap in the middle of the Tertky electrode 6, and the Schottky electrodes on both sides of the gap are independent of each other; at the gap of the Schottky electrode 6, the top of the N-type absorption layer 3 also includes an N-type barrier layer 4 and an N-type barrier layer in sequence. Short wave filter layer 5.

[0021] From the perspective of material selection, the substrate 1 is made of nano-patterned sapphire; the Schottky electrode 6 is an interdigital electrode; the buffer layer 2 is made of AlN; the N-type absorber layer 3 is unintentionally doped weak N-type Al x Ga 1-x N material, where 0≤x≤1, the doping concentration is about 1×10 16 cm -3 ; The N-type barrier layer 4 is intentionally doped N-type Al ...

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Abstract

The invention discloses a narrow band-pass GaN-based MSM structure ultraviolet detector based on NPSS, and relates to a semiconductor photoelectronic device. The invention aims at providing the narrow band-pass GaN-based MSM structure ultraviolet detector based on NPSS, the transportation mode of the ultraviolet detector is selected via a stop barrier structure, and meanwhile the advanced NPSS technology is adopted, thus the purpose of comprehensively improving the performance of the narrow band-pass ultraviolet detector is achieved. The narrow band-pass GaN-based MSM structure ultraviolet detector based on NPSS provided by the invention comprises a substrate, a buffer layer, an N type absorbing layer and a Schottky electrode in sequence from the bottom up; a notch is formed in the middle of the Schottky electrode, and an N type barrier layer and an N type short wave filter layer are also arranged at the notch of the Schottky electrode and on the N type barrier layer.

Description

technical field [0001] The invention relates to a semiconductor optoelectronic device, in particular to an ultraviolet detector. Background technique [0002] Ultraviolet detection technology is another dual-use photoelectric detection technology developed after infrared and laser detection technology. Ultraviolet detection technology is widely used in missile early warning and tracking, high security ultraviolet communication, medicine, biology, food and drug safety, flame monitoring, ozone detection, laser detection, fluorescence analysis and astronomical research and many other fields. At present, ultraviolet detection systems that have been put into commercial and military applications mostly use ultraviolet-sensitive photomultiplier tubes and similar vacuum devices. Although vacuum devices can achieve high-response ultraviolet detection, compared with solid-state detectors, they have disadvantages such as fragile, large volume, and high operating voltage. With the adv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/108H01L31/0304
CPCH01L31/03048H01L31/1085
Inventor 王俊郭进王国胜吴浩然王唐林宋曼易媛媛谢峰
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST