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A Single-Stage Blocking Structure Narrow Bandpass UV Detector

A technology of ultraviolet detectors and blocking structures, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of not being able to solve the short-wave rejection ratio and reduce the quantum efficiency of detectors, so as to reduce dark current, improve performance, The effect of improving the shortwave rejection ratio

Active Publication Date: 2017-05-31
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this structure cannot solve the short-wave rejection ratio of the detector in the short-wave ultraviolet well. Although the short-wave rejection ratio can be effectively improved by increasing the thickness of the short-wave filter layer, the quantum efficiency of the detector will also be reduced at the same time.

Method used

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  • A Single-Stage Blocking Structure Narrow Bandpass UV Detector
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  • A Single-Stage Blocking Structure Narrow Bandpass UV Detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The substrate 1 is a sapphire substrate.

[0046] The buffer layer 2 is grown on the sapphire substrate 1 and is a low-temperature epitaxial GaN material; the thickness of the buffer layer 2 is 30 nm.

[0047] The N-type ohmic contact layer 3 is fabricated on the buffer layer 2 and is an N-type GaN material with a high electron concentration, and the doping concentration is 1×10 18 cm -3 ; The thickness of the N-type ohmic contact layer 3 is 500nm.

[0048] The I-type absorbing layer 4 is fabricated on the N-type ohmic contact layer 3 and is an unintentionally doped N-type GaN material; the thickness of the I-type absorbing layer 4 is 500 nm.

[0049] The P-type single-stage barrier layer 5 is fabricated on the I-type absorber layer 4, which is P-type Al 0.3 Ga 0.7 N material, center doping concentration is 1×10 18 cm -3 ; The thickness of the P-type single-level barrier layer 5 is 60nm.

[0050] The P-type filter layer 6 is fabricated on the P-type single-stage ...

Embodiment 2

[0057] The substrate 1 is a sapphire substrate.

[0058] The buffer layer 2 is grown on the sapphire substrate 1 and is a low-temperature epitaxial GaN material; the thickness of the buffer layer 2 is 30 nm.

[0059] The N-type ohmic contact layer 3 is fabricated on the buffer layer 2 and is an N-type GaN material with a high electron concentration, and the doping concentration is 2×10 18 cm -3 ; The thickness of the N-type ohmic contact layer 3 is 2000nm.

[0060] The I-type absorbing layer 4 is fabricated on the N-type ohmic contact layer 3 and is an unintentionally doped N-type GaN material; the thickness of the I-type absorbing layer 4 is 500 nm.

[0061] The P-type single-stage barrier layer 5 is fabricated on the I-type absorber layer 4, which is P-type Al 0.3 Ga 0.7 N material, center doping concentration is 1×10 18 cm -3 ; The thickness of the P-type single-level barrier layer 5 is 60nm.

[0062] The P-type filter layer 6 is fabricated on the P-type single-stage...

Embodiment 3

[0069] The substrate 1 is a sapphire substrate.

[0070] The buffer layer 2 is grown on the sapphire substrate 1 and is a low-temperature epitaxial GaN material; the thickness of the buffer layer 2 is 30 nm.

[0071] The N-type ohmic contact layer 3 is fabricated on the buffer layer 2, and is an N-type GaN material with a high electron concentration, and the doping concentration is 5×10 18 cm -3 ; The thickness of the N-type ohmic contact layer 3 is 4000nm.

[0072] The I-type absorbing layer 4 is fabricated on the N-type ohmic contact layer 3 and is unintentionally doped N-type Al 0.1 Ga 0.9 N material; the thickness of the I-type absorbing layer 4 is 500nm.

[0073] The P-type single-stage barrier layer 5 is fabricated on the I-type absorber layer 4, which is P-type Al 0.4 Ga 0.6 N material, center doping concentration is 1×10 18 cm -3 ; The thickness of the P-type single-level barrier layer 5 is 60nm.

[0074] The P-type filter layer 6 is fabricated on the P-type s...

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Abstract

The invention discloses a single-stage barrier structure narrow-band pass ultraviolet detector, which comprises a substrate, a buffer layer, an N-type ohmic contact layer, an I-type absorption layer, a P-type single-stage barrier layer, a P-type filter layer, an N-type ohmic contact electrode and a P-type ohmic contact electrode. The barrier layer forms a single-stage energy band structure by employing gradient doping and gradient component distribution, so that the energy band offset of a heterojunction completely falls on a conduction band while a valence band is of a flat structure, free motion of electrons generated by a shortwave filtering layer can be blocked, and meanwhile, collection of hole signals of the absorption layer is not affected. Meanwhile, a transport channel of dark current can be blocked through introduction of the structure. By the single-stage barrier structure narrow-band pass ultraviolet detector, the shortwave rejection ratio of the detector can be effectively improved, the dark current of the device is reduced, the performance of the detector is significantly improved and the responsivity of the detector is not affected.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic detection devices, in particular to a narrow-bandpass ultraviolet detector with a single-stage blocking structure. Background technique [0002] Ultraviolet detection technology is another dual-use photoelectric detection technology after infrared detection and laser detection technology. As an important supplement to infrared detection technology, ultraviolet detection technology has a wide range of applications, such as missile early warning, precision guidance, ultraviolet secure communication, biochemical analysis, open flame detection, biomedical analysis, offshore oil monitoring, ozone concentration monitoring, solar ultraviolet index monitoring, etc. field. The GaN-based ternary alloy AlGaN is a direct band gap semiconductor. With the change of the Al composition in the alloy material, the band gap changes continuously between 3.4eV–6.2eV, and the corresponding peak re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/0304H01L31/0352
CPCH01L31/03048H01L31/035272H01L31/105
Inventor 王俊郭进宋曼易媛媛谢峰王国胜吴浩然
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST