A Novel Gan-based Pin Structure UV Detector

Abstract

The invention discloses a novel GaN-based ultraviolet detector adopting a PIN structure and belongs to the technical field of semiconductor optoelectronic devices. The detector comprises a substrate, a buffer layer, an N-type shortwave filter layer, an I-type absorption layer, a P-type ohmic contact layer, a P-type ohmic contact electrode, an N-type ohmic contact electrode and an N-type barrier layer, wherein the buffer layer is arranged on the substrate in an epitaxial manner, the N-type shortwave filter layer is produced on the buffer layer, the P-type ohmic contact layer is produced on the I-type absorption layer, the P-type ohmic contact electrode is produced on the P-type ohmic contact layer, the N-type ohmic contact electrode adopts an annular structure and is produced on the N-type shortwave filter layer, the N-type barrier layer is produced on the N-type shortwave filter layer, and the I-type absorption layer is produced on the N-type barrier layer. The detector has the advantages that the shortwave suppression ratio of the detector can be effectively increased, detector wavebands can be selected through adjustment of different epitaxial layer components, and meanwhile, dark currents of the detector can be reduced by the aid of the barrier layer, so that the performance of the detector is improved.

Description

[0001] Technical field: [0002] The invention belongs to the technical field of semiconductor optoelectronic devices, specifically a novel GaN-based PIN structure ultraviolet detector with narrow spectral response, selectable narrow bandpass, high short-wave suppression ratio and low dark current characteristics. [0003] Background technique: [0004] Ultraviolet detection technology is another dual-use photoelectric detection technology after infrared detection and laser detection technology. As an important supplement to infrared detection technology, ultraviolet detection technology has a wide range of applications, such as missile early warning, precision guidance, ultraviolet secure communication, biochemical analysis, open flame detection, biomedical analysis, offshore oil monitoring, ozone concentration monitoring, solar index monitoring and other fields . The GaN-based ternary alloy AlGaN is a direct band gap semiconductor. With the change of the Al composition in th...

AI Technical Summary

Problems solved by technology

However, since the photogenerated carriers generated by the short-wave filter layer are easy to diffuse into the depletion absorption region, this part of the carriers diffused into the depletion region is detected by the detector, thereby reducing the short-wave rejection ratio of the detector.

Although increasing the thickness of the short-wave filter layer can effectively improve the short-wave rejection quality ratio, it will also reduce the quantum efficiency of the detector.

Images