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A Narrow Bandpass UV Detector with Unipolar Blocking Structure

一种紫外探测器、阻挡结构的技术，应用在半导体器件、电气元件、电路等方向，能够解决降低探测器量子效率、不能很好的解决短波抑制比等问题，达到降低暗电流、提高性能、提高短波抑制比的效果

Active Publication Date: 2017-09-15
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this structure cannot solve the short-wave rejection ratio of the detector in the short-wave ultraviolet well. Although the short-wave rejection ratio can be effectively improved by increasing the thickness of the short-wave filter layer, the quantum efficiency of the detector will also be reduced at the same time.

Method used

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  • A Narrow Bandpass UV Detector with Unipolar Blocking Structure
  • A Narrow Bandpass UV Detector with Unipolar Blocking Structure
  • A Narrow Bandpass UV Detector with Unipolar Blocking Structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The substrate 1 is a sapphire substrate.

[0046] The buffer layer 2 is grown on the sapphire substrate 1 and is a low-temperature epitaxial GaN material; the thickness of the buffer layer 2 is 30 nm.

[0047] The N-type ohmic contact layer 3 is fabricated on the buffer layer 2 and is an N-type GaN material with a high electron concentration, and the doping concentration is 1×10 18 cm -3 ; The thickness of the N-type ohmic contact layer 3 is 500nm.

[0048] The I-type absorbing layer 4 is fabricated on the N-type ohmic contact layer 3 and is an unintentionally doped N-type GaN material; the thickness of the I-type absorbing layer 4 is 500 nm.

[0049] The P-type unipolar barrier layer 5 is fabricated on the I-type absorber layer 4, which is P-type Al 0.3 Ga 0.7 N material, center doping concentration is 1×10 18 cm -3 ; The thickness of the P-type unipolar barrier layer 5 is 60nm.

[0050] The P-type filter layer 6 is fabricated on the P-type unipolar barrier laye...

Embodiment 2

[0057] The substrate 1 is a sapphire substrate.

[0058] The buffer layer 2 is grown on the sapphire substrate 1 and is a low-temperature epitaxial GaN material; the thickness of the buffer layer 2 is 30 nm.

[0059] The N-type ohmic contact layer 3 is fabricated on the buffer layer 2 and is an N-type GaN material with a high electron concentration, and the doping concentration is 2×10 18 cm -3 ; The thickness of the N-type ohmic contact layer 3 is 2000nm.

[0060] The I-type absorbing layer 4 is fabricated on the N-type ohmic contact layer 3 and is an unintentionally doped N-type GaN material; the thickness of the I-type absorbing layer 4 is 500 nm.

[0061] The P-type unipolar barrier layer 5 is fabricated on the I-type absorber layer 4, which is P-type Al 0.3 Ga 0.7 N material, center doping concentration is 1×10 18 cm -3 ; The thickness of the P-type unipolar barrier layer 5 is 60nm.

[0062] The P-type filter layer 6 is fabricated on the P-type unipolar barrier lay...

Embodiment 3

[0069] The substrate 1 is a sapphire substrate.

[0070] The buffer layer 2 is grown on the sapphire substrate 1 and is a low-temperature epitaxial GaN material; the thickness of the buffer layer 2 is 30 nm.

[0071] The N-type ohmic contact layer 3 is fabricated on the buffer layer 2, and is an N-type GaN material with a high electron concentration, and the doping concentration is 5×10 18 cm -3 ; The thickness of the N-type ohmic contact layer 3 is 4000nm.

[0072] The I-type absorbing layer 4 is fabricated on the N-type ohmic contact layer 3 and is unintentionally doped N-type Al 0.1 Ga 0.9 N material; the thickness of the I-type absorbing layer 4 is 500nm.

[0073] The P-type unipolar barrier layer 5 is fabricated on the I-type absorber layer 4, which is P-type Al 0.4 Ga 0.6 N material, center doping concentration is 1×10 18 cm -3 ; The thickness of the P-type unipolar barrier layer 5 is 60nm.

[0074] The P-type filter layer 6 is fabricated on the P-type unipolar ...

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Abstract

The invention discloses a narrow bandpass ultraviolet detector with a unipolar blocking structure, which includes: a substrate, a buffer layer, an N-type ohmic contact layer, an I-type absorption layer, a P-type unipolar blocking layer, a P-type filter layer, and an N-type ohmic contact layer. Contact electrode, P-type ohmic contact electrode; the barrier layer of the present invention adopts gradient doping and gradient component distribution to form a unipolar energy band structure, so that the energy band offset of the heterojunction all falls on the conduction band, while the valence band is flat The structure can block the free movement of electrons generated by the short-wave filter layer without affecting the collection of hole signals in the absorption layer. At the same time, the introduction of this structure can also block the transport channel of dark current. The invention can effectively improve the short-wave suppression ratio of the detector, reduce the dark current of the device, and significantly improve the performance of the detector without affecting its response rate.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic detection devices, in particular to a narrow bandpass ultraviolet detector with a unipolar blocking structure. Background technique [0002] Ultraviolet detection technology is another dual-use photoelectric detection technology after infrared detection and laser detection technology. As an important supplement to infrared detection technology, ultraviolet detection technology has a wide range of applications, such as missile early warning, precision guidance, ultraviolet secure communication, biochemical analysis, open flame detection, biomedical analysis, offshore oil monitoring, ozone concentration monitoring, solar ultraviolet index monitoring, etc. field. The GaN-based ternary alloy AlGaN is a direct band gap semiconductor. With the change of the Al composition in the alloy material, the band gap changes continuously between 3.4eV–6.2eV, and the corresponding peak respon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/0304H01L31/0352
CPCH01L31/03048H01L31/035272H01L31/105
Inventor 王俊郭进宋曼易媛媛谢峰王国胜吴浩然
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST