Research method of silicon-based microstructure deformation mechanism based on phase field model at high temperature

A silicon-based microstructure and model technology, applied in the micro-nano field, can solve problems such as limitations in understanding particle diffusion, and achieve the effect of reducing complexity

Active Publication Date: 2019-04-02
嘉兴华吉环保科技有限公司
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  • Application Information

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Problems solved by technology

[0004] In recent years, the industry has devoted itself to using mathematical models to analyze and calculate the diffusion between particles, but the early studies were based on one-dimensional and two-dimensional models, which have limitations in understanding the real diffusion between particles

Method used

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  • Research method of silicon-based microstructure deformation mechanism based on phase field model at high temperature
  • Research method of silicon-based microstructure deformation mechanism based on phase field model at high temperature
  • Research method of silicon-based microstructure deformation mechanism based on phase field model at high temperature

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Embodiment Construction

[0049] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0050] The drawings involved in this embodiment are all simplified schematic diagrams, which merely illustrate the basic structure of the present invention in a schematic manner, and therefore, only show the structures related to the present invention.

[0051] Build as figure 1 As shown in the experimental bench, the silicon-based microstructure material used is a polished 6-in (100) n-type silicon wafer; the raw material is placed in an 88°C environment for 90 seconds to soften it; the processed The sample is manufactured using an ion etching machine such as figure 2 U-shaped cylindrical hole shown;

[0052] Such as image 3 As shown, the U-shaped cylindrical hole sample is placed in an environment of 1150°C for 3 minutes;

[0053] Such as Figure 4 As shown, a schematic diagram of the morphological change of the silicon-based microstructure i...

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Abstract

The invention discloses an SON (Silicon on Nothing) deformation mechanism study method based on a phase field model at a high temperature. The method comprises the following steps of 1, putting a sample, i.e., an SON material at a certain temperature so that the sample becomes soft, and then making the sample into a U-shaped cylindrical hole shape; 2, putting the SON material into a high-temperature environment to be processed for several minutes for obtaining the SON form change state in different time periods; and 3, building a system model of the SON at the high temperature. According to the method, the SON deformation mechanism at the high temperature is studied by the method of integrating the experiment study and the simulation model for the first time. The SON forming process is controlled by using the high-temperature atomic diffusion motion; through the simulation model, the SON forming change can be more directly observed; and thus, a novel idea for processing the SON is provided.

Description

Technical field [0001] The invention belongs to the field of micro-nano technology, and specifically relates to a method for studying the deformation mechanism of a silicon-based microstructure at high temperature based on a phase field model. Background technique [0002] Silicon material is one of the main materials for MEMS (Micro Electro Mechanical System) manufacturing. A three-dimensional structure with a size of micrometers is fabricated on a silicon wafer to realize the perception and control of external information and form a multi-functional micro system. In recent years, various disciplines have been unremittingly trying various new science and technology, trying to use various methods to design and manufacture silicon-based microstructures. Silicon on nothing (SON) is used in various mechanical devices, such as sensors, semiconductor transistors . However, so far, the research on how to control the preparation of SON structure and apply it to resonators with differen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 张俐楠郑伟吴立群
Owner 嘉兴华吉环保科技有限公司
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