Method for manufacturing low-temperature polysilicon thin film, thin film transistor, array substrate and display device

Abstract

The invention discloses a manufacturing method of a low-temperature polycrystalline silicon thin film, a thin film transistor, an array substrate and a display device. The method comprises the following steps: forming a metal pattern on a substrate; forming a buffer layer with which the metal pattern is covered on the metal layer; removing the metal pattern in the buffer layer so that a cavity structure is formed in the buffer layer; and forming the low-temperature polycrystalline silicon thin film on the buffer layer. When low-temperature polycrystalline silicon is grown, the cooling velocity of the cavity structure is relatively low and is beneficial for growth after crystalline grain nucleation, so that larger crystalline grains are formed; therefore, the larger crystalline grains can be formed by designing the cavity structure, the dimensions of the crystalline grains are relatively large, and corresponding grain boundaries and defects are lesser, so that the problem of poor homogeneity of threshold voltage and migration rate for the thin film transistor caused by the existence of a plurality of grain boundaries and defects and uneven distribution of the grain boundaries and defects in the low-temperature polycrystalline silicon thin film is solved.

Description

technical field [0001] The invention relates to the field of displays, in particular to a method for manufacturing a low-temperature polysilicon thin film, a thin film transistor, an array substrate and a display device. Background technique [0002] Active Matrix / Organic Light Emitting Diode (AMOLED) display technology has become the best choice for future display technology due to its advantages of high image quality, low power consumption, wide viewing angle and ultra-light and ultra-thin. At present, the active layer of the thin film transistor in the AMOLED display technology is generally implemented by a low-temperature polysilicon thin film with high carrier mobility. [0003] Due to the existence of a large number of grain boundaries and defects in the existing low-temperature polysilicon thin films, and the uneven distribution of grain boundaries and defects, the uniformity of the threshold voltage and mobility of thin film transistors is not good, especially when t...

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Problems solved by technology

[0004] In order to solve the problem of poor uniformity of the threshold voltage and mobility of thin film transistors due to the existence of a large number of grain boundaries and defects, and the uneven distribution of grain boundaries and defects, the embodiment of the present invention provides a low-temperature polysilicon thin film fabrication method. Method, thin film transistor, array substrate and display device

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