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Substrate processing method and substrate processing apparatus

A technology of a substrate processing device and a substrate processing method, applied in the field of plasma processing

Active Publication Date: 2019-12-06
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in plasma etching, if the substrate is detached from the mounting table, the substrate mounting surface of the mounting table is exposed, and abnormal discharge may occur between the edge of the gas hole with a low withstand voltage and the plasma.

Method used

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  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

Examples

Experimental program
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Embodiment Construction

[0039] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0040] figure 1 It is a perspective view schematically showing the configuration of a substrate processing system including a plurality of substrate processing apparatuses according to the present embodiment.

[0041] exist figure 1 Among them, the substrate processing system 10 has three substrate processing apparatuses 11 for performing plasma processing such as plasma etching on a substrate G for FPD such as a glass substrate.

[0042] Each substrate processing apparatus 11 is connected to a side surface of a transfer chamber 12 having a polygonal horizontal cross section (for example, a rectangular horizontal cross section) via a gate valve 13 . The load lock chamber 14 is also connected to the transfer chamber 12 via a gate valve 15 . The substrate loading and unloading mechanism 16 is provided adjacent to the load lock chamber 14 via the gate valve 17 . The tw...

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PUM

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Abstract

The invention provides a substrate processing method capable of correctly detecting that a substrate is stripped from an objective table. A substrate processing device (11) comprises a chamber (20) for receiving the substrate (G) and performing plasma etching on the substrate (G) by using plasma; an objective table (21) disposed inside the chamber (20) and used for bearing the substrate (G); an electrostatic adsorption electrode (27) disposed on the objective table (21) and electrostatically adsorbing the substrate (G) onto the objective table (21); a DC power supply (28) applying DC voltage to the electrostatic adsorption electrode (27); a plasma generating high-frequency power supply (41) for supplying high-frequency power for generating the plasma; and a DC voltage monitor (46) for monitoring the DC voltage applied to the electrostatic adsorption electrode (27). When the DC voltage monitored by the DC voltage monitor exceeds a prescribed threshold value, the plasma generating high-frequency power supply stops supplying high-frequency power.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing apparatus for performing plasma processing on a large substrate such as a substrate for a flat panel display (FPD). Background technique [0002] In the manufacture of panels for FPDs, pixel devices, electrodes, wiring, and the like are formed on a substrate made of an insulator such as glass. Among the various steps of such panel production, microfabrication steps such as etching, CVD, ashing, and sputtering are often performed by a substrate processing apparatus using plasma. In the substrate processing apparatus, for example, a substrate is placed on a stage having a susceptor as a lower electrode in a depressurizable processing chamber, and plasma is generated on the substrate from a processing gas by supplying high-frequency power to the susceptor. This plasma etches the substrate, for example. [0003] In general, the progress rate of etching using plasma ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/683
CPCH01L21/67265H01L21/6831H01L2221/68386
Inventor 东条利洋山口克昌宇津木康史
Owner TOKYO ELECTRON LTD