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Improved contacts for semiconductor manufacturing

A technology of semiconductors and contacts, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Active Publication Date: 2019-04-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the narrow width between the fin structures, it is difficult to place contacts on the source or drain regions such that there is good electrical contact between the contacts and the source or drain regions

Method used

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  • Improved contacts for semiconductor manufacturing
  • Improved contacts for semiconductor manufacturing
  • Improved contacts for semiconductor manufacturing

Examples

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Embodiment Construction

[0036] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are intended to be limiting. For example, in the following description a first part is formed over or on a second part may include embodiments in which the first and second parts are formed in direct contact, and may also include forming an interposed part between the first and second parts. An embodiment in which an additional component is placed so that the first and second components are not in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for the sake of brevity and clarity and does not in itself indicate a relationship between the various embodiments and / or structures that are discussed....

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PUM

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Abstract

A semiconductor device includes: a substrate; a fin structure on the substrate, the fin structure including a doped region; a first gate positioned above the fin structure, the first gate is placed adjacent to the doped region, and the first gate is in the a spacer on the first side and no spacer on the second side between the gate and the doped region; and a conductive plug contacting the top of the doped region and the gate. The present invention relates to improved contacts for use in semiconductor manufacturing.

Description

technical field [0001] The present invention relates to improved contacts for use in semiconductor manufacturing. Background technique [0002] An integrated circuit includes several types of components, especially transistors. One type of transistor is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET device includes a gate structure on top of a semiconductor substrate. Doping is then performed on both sides of the gate structure to form source and drain regions. A channel is formed between the source and drain regions below the gate. Based on the bias voltage applied to the gate, current may be allowed or forbidden to flow through the channel. [0003] In some cases, the channel may be formed using a fin structure. The fin structure extends from the substrate and is perpendicular to the substrate and a gate structure formed on the fin structure. Doped regions, such as source and drain regions, are formed in the fin structure on both sides of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L21/768H01L27/11
CPCH01L21/823475H01L21/76895H01L21/76897H01L29/66545H01L29/66795H01L29/785H01L29/665H01L27/0886H01L29/6653H01L21/823431H10B10/12H01L2029/7858H01L29/45H01L29/41791H01L29/6681
Inventor 廖忠志
Owner TAIWAN SEMICON MFG CO LTD