Semiconductor device used for magnetic shielding and manufacturing method therefor
A manufacturing method and semiconductor technology, applied in the field of microelectronics, can solve problems such as interference and affect the operation of devices, and achieve the effects of preventing damage, avoiding short circuits, and shielding the effects of
Active Publication Date: 2016-10-12
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology
[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor device for magnetic field shielding and its manufacturing method, which is used to solve the proble
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[0050] The following describes the implementation of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0051] See Figure 1 to Figure 8 . It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of the present invention in a schematic way, and the figures only show the components related to the present invention instead of the number, shape, and shape of the components in actual implementation. For size drawing, the type, quantity, and proportion of each component can be changed at will during actu...
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Abstract
The invention provides a semiconductor device used for magnetic shielding and a manufacturing method therefor. The semiconductor device comprises a substrate, a first superconducting layer which is positioned on the upper surface of the substrate, a first dielectric layer which is positioned on the surface of the first superconducting layer, a Hall structure which is positioned on the surface of the first dielectric layer and formed by a two-dimensional semiconductor thin film layer, a second dielectric layer which is positioned on the surface of the Hall structure, a second superconducting layer which is positioned on the surface of the second dielectric layer, and a metal contact electrode which is positioned on the upper surface of the substrate and connected with the Hall structure, wherein the lengths and widths of the first and second superconducting layers are less than that of the first and second dielectric layers; and the lengths and widths of the first and second dielectric layers are both less than that of the Hall structure; and the length and the width of the Hall structure are less than that of the substrate. By adoption of the semiconductor device used for magnetic field shielding and the manufacturing method therefor, the problem that the when the two-dimensional semiconductor thin film is applied to the novel micro-nano electronic device, the two-dimensional semiconductor thin film is easily subjected to electromagnetic field interference in the environment and the operation of the electronic device is further influenced in the prior art is solved.
Description
Technical field [0001] The invention relates to the field of microelectronics, in particular to a semiconductor device used for magnetic field shielding and a manufacturing method thereof. Background technique [0002] In recent years, graphene, MoS 2 A series of new two-dimensional crystalline semiconductor materials (with a thickness of a single or several atoms) have become a new direction of semiconductor material research due to their superior electrical, chemical, and optical properties, and have broad application prospects in the field of microelectronics. [0003] The quantum Hall effect of the two-dimensional semiconductor film has been confirmed by theory and experiment. Its energy level will split under a low-temperature magnetic field, and the resistance changes obviously with the magnetic field, so it has the characteristic of being extremely sensitive to the magnetic field. [0004] With the increasing application of two-dimensional semiconductor thin films in new micro...
Claims
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Login to view more IPC IPC(8): H01L23/552H01L21/768
CPCH01L23/552H01L21/76838
Inventor 王浩敏谢红李蕾王慧山谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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