According to the
metal filling groove structure and the preparation method thereof, the insulating film layer is arranged between the first
metal layer and the second
metal layer, the second metal layer is ground firstly in the CMP technology process of the metal filling groove by adopting an
eddy current sensor, and due to the insulating effect of the insulating film layer, the first metal layer is ground, and the second metal layer is ground;
turbine current noise generated by the first metal layer in the groove can be shielded, and the Endpoint end point grabbing accuracy of
grinding of the second metal layer is improved. Meanwhile, particularly, when the first metal layer on the surface of the
wafer is ground, due to the insulation effect of the insulation film layer, the lowest point of the insulation film layer in the groove area is located at the position of-500 nm to 500 nm at the top of the groove, and therefore the
grinding efficiency of the first metal layer on the surface of the
wafer is improved. The influence of
turbine current noise generated by the first metal layer in the groove on
turbine current during
grinding of the first metal layer on the surface of the
wafer can be effectively shielded, and the Endpoint end point grabbing accuracy is improved; in addition, turbine current signals can be integrally improved, and the CLC and RTPC functions for automatically adjusting the uniformity of the surface of the wafer are enhanced.