Unlock instant, AI-driven research and patent intelligence for your innovation.

Grazing angle plasma processing for modifying a substrate surface

A technology of grazing angle and substrate, applied in the direction of plasma, semiconductor/solid-state device manufacturing, discharge tube, etc.

Inactive Publication Date: 2016-10-12
APPLIED MATERIALS INC
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Further, in CMP applications that generate toxic by-products or toxic waste, due to toxic materials (such as InGaAs material, GaAs material) in the polished layer, the substrate and Handling of contaminated system components becomes a larger safety and / or consumable cost issue

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grazing angle plasma processing for modifying a substrate surface
  • Grazing angle plasma processing for modifying a substrate surface
  • Grazing angle plasma processing for modifying a substrate surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Embodiments of the disclosure provided herein include apparatus and methods for modifying a substrate surface using a plasma modification process. The plasma modification process may comprise a plasma planarization process which generally involves removing and / or redistributing The portion of the exposed surface of a substrate. Embodiments of the present disclosure may also provide plasma modification processes comprising one or more pre-planarization processing steps and / or one or more post-planarization processing steps all performed within one processing system step. Some embodiments of the present disclosure may provide apparatus and methods for planarizing a substrate surface by processing chambers within the same processing chamber, within the same processing system, or across two or more processing systems All plasma modification processes are performed in-house.

[0035] In some embodiments, planarization of portions of the exposed surface of the substrate ma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the disclosure provide apparatus and methods for modifying a surface of a substrate using a plasma modification process. In one embodiment, a process generally includes the removal and / or redistribution of a portion of an exposed surface of the substrate by use of an energetic particle beam while the substrate is disposed within a particle beam modification apparatus. Embodiments may also provide a plasma modification process that includes one or more pre-planarization processing steps and / or one or more post-planarization processing steps that are all performed within one processing system. Some embodiments may provide an apparatus and methods for planarizing a surface of a substrate by performing all of the plasma modification processes within either the same processing chamber, the same processing system or within processing chambers found in two or more processing systems.

Description

[0001] background of invention technical field [0002] Embodiments of the disclosure provided herein generally relate to apparatus and methods for planarizing non-uniform surface topography found on substrate surfaces. Background technique [0003] Integrated circuits are typically formed on substrates, especially silicon wafers, by sequentially depositing conductive, semiconductive or insulating layers. After each layer is deposited, each layer is etched to create circuitry features. As a series of layers are sequentially deposited and etched, the outer or uppermost surface of the substrate (ie, the exposed surface of the substrate) becomes increasingly uneven. FIG. 1A is a cross-sectional view of a device structure 100 having a non-planar surface 120 formed on a substrate 112 . The device structure 100 can include a patterned layer 114 formed on the surface of the substrate 112 and a deposited layer 116 formed on the patterned layer 114 and above the substrate 112 . ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
CPCH01J37/32091H01J37/32422H01J37/32568H01J37/32899H01L21/304H01L21/30625H01L21/02315H05H1/46
Inventor L·戈黛E·Y·叶S·D·耐马尼G·E·迪肯森S·B·拉杜瓦诺维A·布兰德
Owner APPLIED MATERIALS INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More