Unlock instant, AI-driven research and patent intelligence for your innovation.

Ultraviolet light-emitting device

A technology of light emitters and reflectors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low light extraction efficiency and achieve the effect of improving the light output effect

Active Publication Date: 2016-10-26
QINGDAO JASON ELECTRIC
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inefficiency of light extraction is often due to absorption and total reflection inside the emitter material.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet light-emitting device
  • Ultraviolet light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The ultraviolet illuminator proposed in this embodiment comprises N-type electrode 9 and P-type electrode 10, and N-type electrode 9 and / or P-type electrode 10 is connected with reflector 12; light effect. Wherein, the reflective member of the N-type electrode is arranged in the N-type semiconductor layer of the ultraviolet light emitter and / or the reflective member of the P-type electrode is arranged in the P-type semiconductor layer of the ultraviolet emitter.

[0027] Specifically, this embodiment is described by taking the P-type electrode 10 connected to the light-reflecting member 12 as an example, and the way that the N-type electrode 9 is connected to the light-reflecting member 12 is similar and will not be repeated here.

[0028] Such as figure 1 As shown, the P-type semiconductor layer is provided with an accommodating cavity for accommodating the reflective element 12 , the reflective element 12 is located in the accommodating cavity, and the P-type electro...

Embodiment 2

[0041] The difference between this embodiment and Embodiment 1 lies in that the arrangement of the reflective member in this embodiment is different from that in Embodiment 1. The setting method of the reflector with P-type electrodes is described below:

[0042] The P-type electrode 10 of this embodiment includes a planar electrode and a columnar electrode connected to the planar electrode. A cavity for accommodating the columnar electrode is arranged in the P-type layer, and a reflector 12 is embedded in the bottom of the cavity. The reflector 12 and the columnar electrode connect.

[0043] Such as figure 2 As shown, the P-type semiconductor layer of the ultraviolet emitter in this embodiment includes P-type Al x Ga 1-x N layer 7 and P-type GaN layer 8, P-type GaN layer 8 is provided with the through hole that accommodates columnar electrode, P-type Al x Ga 1-x The N layer 7 is provided with a cavity for accommodating the reflective member 12 .

[0044] The P-type ele...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Growth temperatureaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ultraviolet light-emitting device comprising an N-type electrode and a P-type electrode, wherein the N-type electrode and / or the P-type electrode are / is connected with reflectors; when the N-type electrode is connected with the reflectors, the reflectors of the N-type electrode are arranged in an N-type semiconductor layer of the ultraviolet light-emitting device; when the P-type electrode is connected with the reflectors, the reflectors of the P-type electrode are arranged in a P-type semiconductor layer of the ultraviolet light-emitting device; and when both the N-type electrode and the P-type electrode are connected with the reflectors, the reflectors of the N-type electrode are arranged in the N-type semiconductor layer of the ultraviolet light-emitting device, and the reflectors of the P-type electrode are arranged in the P-type semiconductor layer of the ultraviolet light-emitting device. The reflectors have a reflecting effect on ultraviolet, so that the light emission effect of the ultraviolet light-emitting device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to an ultraviolet light emitter and an ultraviolet light emitter. Background technique [0002] The killing effect of ultraviolet rays on bacteria and viruses is generally completed within a few seconds. Among all disinfection technologies, ultraviolet disinfection technology has the highest bactericidal broad-spectrum, and it has a high-efficiency killing effect on almost all bacteria and viruses. Traditional ultraviolet light sources are gas lasers and mercury lamps, which have disadvantages such as low efficiency, large size, environmental protection, and high voltage, while deep ultraviolet LED light sources have the advantages of low power consumption, long life, and no pollution. However, in the deep ultraviolet field where the emission wavelength is less than 280 nanometers, the luminous power and efficiency of the light-emitting diodes are rela...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/36H01L33/60
CPCH01L33/36H01L33/60
Inventor 武帅郑远志梁旭东张国华
Owner QINGDAO JASON ELECTRIC