Method for manufacturing semiconductor mode-locked laser based full quantum well selective area epitaxy
A technology of selective area epitaxy and fabrication method, which is applied in the field of semiconductor mode-locked laser fabrication based on full quantum well selective area epitaxy, can solve the problems of poor device aging performance, large material damage, low yield, etc., and achieves material aging performance Good, the effect of compressing the pulse width and reducing the time domain jitter
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[0034] The present invention proposes a semiconductor mode-locked laser preparation method based on full quantum well selective region epitaxy, which includes:
[0035] Step 1: Prepare a selected area epitaxial mask strip with a predetermined size and predetermined material according to the required mode-locking pulse width and repetition frequency, the predetermined size includes the length, width, deposition thickness, and thickness of the selected area epitaxial mask strip. The length ratio of the mask and the non-mask area, the inclination angle of the mask (relevant to the wedge-shaped and trapezoidal mask structure), the predetermined material includes the dielectric material SiO or SiN, etc., such as figure 1 and figure 2 shown.
[0036] figure 1Each figure in the figure relates to the core key structure of the present invention, including uniform and non-uniform selective epitaxial mask patterns, single-arm, symmetrical double-arm, asymmetric double-arm external cav...
example 1
[0064] At a doping concentration of 5×10 18 cm -3 N-type InP substrate (attached Figure 5 , layer 4) epitaxial one layer of 200nm N-type doped InP epitaxial buffer layer (attached Figure 5 , layer 3); Deposit one deck of 200nm thick SiO2 dielectric layer mask on the epitaxial chip, according to the application requirements, for the required mode-locking pulse width and repetition rate, select the appropriate mask pattern ( In Table A. figure 1 , 3 , 5, 8) make a mask plate; photolithography mask pattern, the mask pattern is transferred to the dielectric layer; in the chamber of 100mbar, 675 ℃, with the mask pattern epitaxial full quantum well structure (attached Figure 5 , layer 2); the wavelength of the epitaxial quantum well is designed around 1550nm or 1310nm, so that the output wavelength of the mode-locked pulse is in the low-loss window of optical fiber transmission, which meets the transmission requirements of optical fiber communication; after that, take out the...
example 2
[0066] At a doping concentration of 5×10 18 cm -3 N-type InP substrate (attached Figure 5 , layer 4) epitaxial one layer of 200nm N-type doped InP epitaxial buffer layer (attached Figure 5 , layer 3); Deposit a 150nm thickness SiO2 dielectric layer mask on the epitaxial chip, according to the application needs, for the required mode-locking pulse width and repetition rate, select the appropriate mask pattern (table) in the attached table 1 A. in figure 1 , 3 , 5, 8) make a mask plate; photolithography mask pattern, the mask pattern is transferred to the dielectric layer; in the chamber of 200mbar, 675 ℃, with the mask pattern epitaxial full quantum well structure (attached Figure 5 , layer 2); the wavelength of the epitaxial quantum well is designed at 1053nm, so that the waveband of the mode-locked pulse output is within the waveband range of the corneal surgery laser knife; the epitaxial film is taken out, and the SiO2 dielectric layer is drifted off by wet BOE, and t...
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