Vertical transistor and its manufacturing method
A vertical transistor, extending direction technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as reduced switching speed, low carrier mobility, etc.
Active Publication Date: 2019-04-26
TAIWAN SEMICON MFG CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] Transistors with low carrier mobility not only reduce switching speed but also reduce the difference between "on" resistance and "off" resistance
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0033] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may include additional components formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact. Additionally, the invention may repeat reference numerals and / or characters in multiple instances. This repetition is for the purposes of simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and / or configurations describe...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A vertical transistor includes a source-channel-drain structure, a gate, and a gate dielectric. The source-channel-drain structure includes a source, a drain over the source, and a channel between the source and the drain. The gate surrounds a portion of the channel. When the vertical transistor is an n-channel vertical transistor, the gate is configured to provide a compressive strain substantially along the direction of extension of the channel, or when the vertical transistor is a p-channel vertical transistor, the gate is configured to provide a compressive strain substantially along the Tensile strain in the direction of extension of the channel. In some embodiments, the vertical transistor further includes an ILD configured to provide a tensile strain substantially along an extension direction of the channel when the vertical transistor is an n-channel vertical transistor, or a p-channel vertical transistor when the vertical transistor is a p-channel vertical transistor Transistor, the ILD is configured to provide a compressive strain substantially along the direction of extension of the channel. The present invention also provides a manufacturing method of the vertical transistor.
Description
technical field [0001] The present invention generally relates to the field of semiconductor technology, and more particularly relates to transistors and manufacturing methods thereof. Background technique [0002] A transistor basically consists of a source, a drain, a channel in between, and a gate. It is well known that conduction selectively occurs or is prevented within the channel depending on the voltage applied to the gate. Carrier mobility is a major factor in maintaining adequate performance of the transistor, which affects the amount of current or charge flowing in the channel under the control of the voltage applied to the gate. [0003] Transistors with low carrier mobility not only reduce switching speed but also reduce the difference between "on" resistance and "off" resistance. Therefore, the search for ways to increase the carrier mobility of the channel will continue. Contents of the invention [0004] In order to solve the defects existing in the prio...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/732H01L21/331
CPCH01L29/775H01L21/823807H01L21/823885H01L27/092B82Y10/00B82Y40/00H01L29/42392H01L29/66439H01L29/0847H01L29/7827H01L29/66666H01L29/42356H01L29/0676H01L29/7843H01L29/4966H01L29/7845H01L29/513H01L29/517H01L29/7842H01L29/7848H01L2924/04541H01L2924/01074H01L2924/01022H01L2924/01013H01L29/495
Inventor 卡洛斯·H.·迪亚兹王志豪连万益杨凯杰汤皓玲
Owner TAIWAN SEMICON MFG CO LTD