A chiral superstructure employing metal silicides
A metal silicide, superstructure technology, applied in the optical field, can solve the problems of the wide application of chiral superstructure, the inability to match the semiconductor processing integration technology, the inability to obtain the maximum value of circular dichroism and polarization rotation at the same time, etc.
Active Publication Date: 2018-11-20
ZHEJIANG UNIV OF TECH
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The results show that the maxima of circular dichroism and polarization rotation cannot be obtained simultaneously
In addition, since the previous chiral superstructures were all constructed with noble metals, it cannot match the existing semiconductor processing integration technology, which limits the wide application of chiral superstructures.
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[0011] The present invention will be described in further detail below in conjunction with the accompanying drawings, but it should not be understood that the scope of the above-mentioned theme of the present invention is limited to the above-mentioned embodiments.
[0012] Such as Figure 1-3 As shown, a chiral superstructure adopting metal silicide includes an upper silicide layer 4, a dielectric layer 3, a lower silicide layer 2 and a substrate layer 1 arranged in sequence along the incident direction of light; the upper silicide layer 4 1. The dielectric layer 3 and the lower silicide layer 2 have the same planar structure, the planar structure includes a plurality of unit structures with a period of p, and the unit structure is composed of four centrally symmetrical rings and crossed rectangles, the rings The inner diameter is r1, the outer diameter of the ring is r2, the length of the rectangle is l, and the width of the rectangle is m=r2-r1; the thickness of the upper s...
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The invention relates to the field of optics and particularly relates to a chiral superstructure. The chiral superstructure adopting metal silicide, provided by the invention, comprises an upper silicide layer, a medium layer, a lower silicide layer and a substrate layer, which are arranged in sequence along a light incident direction; the upper silicide layer, the medium layer and the lower silicide layer have the same planar structure; each planar structure comprises a plurality of unit structures with the period of p; each unit structure is composed of four centrally-symmetric circular rings and a crossed rectangular shape; the inner diameter of each circular ring is r1 and the outer diameter of each circular ring is r2; the length of the rectangular shape is l and the width m of the rectangular shape is equal to (r2-r1); the thicknesses of the upper silicide layer 1 and the lower silicide layer 2 are t; and the thickness of the medium layer 3 is d. By taking NiSi as an example, left and right circular polarized light transmission spectral lines are separated nearby a magnetic resonance point and the circular dichroism of about 0.42 and the ellipticity of 0.7 are generated; and phase mutation occurs and polarization rotation from 60 degrees to -55 degrees is generated at the resonance point.
Description
technical field [0001] The invention relates to the field of optics, in particular to a chiral superstructure. Background technique [0002] In recent years, chiral superstructures have attracted extensive attention and research due to their special electromagnetic and optical properties. Compared with chiral materials in nature, its unusual special properties, such as negative refractive index, strong circular dichroism and polarization rotation, etc., make it a cutting-edge research topic in the fields of electromagnetism and optics. Using the special optical properties of chiral superstructures to modulate the propagation behavior of light makes it widely used in various optical devices. Such as circularly polarized light polarizer, perfect lens, circularly polarized light detector, etc. The so-called chirality refers to a structural feature in which the mirror image of a structure cannot coincide with itself. Compared with the three-dimensional chiral superstructure, ...
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IPC IPC(8): G02F1/00
CPCG02F1/0081
Inventor 鄢波钟柯松隋成华马洪锋高凡徐丹阳陈乃波
Owner ZHEJIANG UNIV OF TECH