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Multi-vt sensing method by changing bit line voltage

A voltage and bit line technology, applied in the field of multi-VT sensing by changing the bit line voltage, can solve the problem of shrinking process geometry

Active Publication Date: 2019-12-03
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as process geometries shrink, many design challenges and process challenges arise
These challenges include improving the variability of transistor characteristics with respect to process, voltage and temperature variations

Method used

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  • Multi-vt sensing method by changing bit line voltage
  • Multi-vt sensing method by changing bit line voltage
  • Multi-vt sensing method by changing bit line voltage

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Embodiment Construction

[0022] Techniques for simultaneously verifying two or more programming states are described. In some cases, during a program verify operation, two or more memory cell program states or memory cell threshold voltage levels can be simultaneously verified by applying a word line voltage to multiple memory cells, applying two or more More different bit line voltages are applied to the plurality of memory cells, and the plurality of memory cells are sensed while two or more different bit line voltages are applied to the plurality of memory cells. The bit line voltage applied during the program verify operation may enable the first plurality of memory cells to operate at the first verify voltage level while biasing the plurality of memory cells to the same word line voltage or control gate (CG) voltage. and the second plurality of memory cells can be sensed at a second verify voltage level different from the first verify voltage level. In one example, during a program verify operat...

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Abstract

This application relates to a multi-VT sensing method by varying the bit line voltage. Methods and systems for simultaneously verifying two or more programming states are described. During a program verify operation, two or more memory cell threshold voltage levels can be simultaneously verified by applying a word line voltage to a plurality of memory cells, applying two or more different bit line voltages up to memory cells, and sensing multiple memory cells while two or more different bit line voltages are applied to the multiple memory cells. The bit line voltage applied during the program verify operation may enable the first plurality of memory cells to be sensed at a first voltage level while causing the second plurality of memory cells to be sensed at a second voltage different from the first voltage level. level is sensed.

Description

[0001] priority statement [0002] This application claims priority to US Provisional Application No. 62 / 172,182, filed June 7, 2015, entitled "Multi-VT Sensing Method," the entire contents of which are incorporated herein by reference. technical field [0003] The present application relates to a multi-VT sensing method by changing bit line voltage. Background technique [0004] Semiconductor memory has been widely used in various electronic devices such as cellular telephones, digital cameras, personal digital assistants, medical electronic devices, mobile computing devices, and non-mobile computing devices. Semiconductor memory may include nonvolatile memory or volatile memory. Nonvolatile memory enables information to be stored and retained even when the nonvolatile memory is not connected to a power source (eg, a battery). Examples of nonvolatile memory include flash memory (eg, NAND-type flash memory and NOR-type flash memory) and electrically erasable programmable r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/24G11C16/10
CPCG11C16/10G11C16/24G11C11/5642G11C16/0483G11C16/12G11C16/28G11C16/32G11C16/3459G11C2211/5621
Inventor 李燕龙迪潘舒·杜塔
Owner SANDISK TECH LLC