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Method for extensible BJT modeling based on GP model

A modeling method and model technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problems that model parameters cannot be scaled and changed, and the model does not have scalability.

Inactive Publication Date: 2016-12-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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Problems solved by technology

[0006] However, in the existing BJT modeling method based on the GP model, each device in the GP model has unique model parameters, and the layout (Layout) and the GP model must correspond one-to-one
The resulting disadvantage is that the existing GP model-based BJT modeling method produces models that are not scalable, and requires more device models when there are more geometric requests; moreover, the model parameters cannot be adjusted Scales nicely with geometry

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  • Method for extensible BJT modeling based on GP model

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Embodiment Construction

[0024] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0025] figure 1 A flow chart of a scalable GP model-based BJT modeling method according to a preferred embodiment of the present invention is schematically shown.

[0026] like figure 1 As shown, the scalable BJT modeling method based on the GP model according to a preferred embodiment of the present invention includes:

[0027] The first step S1: according to different parameters of the GP model, according to different BJT device sizes, draw the trend curve of each parameter of the bipolar transistor GP model;

[0028] For example, in a specific embodiment, in the first step S1, the trend curve of each parameter of the bipolar transistor GP model is drawn by fitting the experimental data under different BJT device sizes.

[0029] Second step...

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Abstract

The invention provides a method for extensible BJT modeling based on a GP model. The method comprises the steps of drawing a trend curve of each parameter of the GP model of a bipolar transistor according to different BJT device dimensions and according to different parameters of the GP model; obtaining a trend formula based on the drawn trend curve of each parameter of the GP model of the bipolar transistor; applying the trend formula to a plug-in subcircuit in the BJT modeling process, and implementing an extensible BJT model in a specific range.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacture and design, more specifically, the present invention relates to a kind of extensible bipolar transistor (Bipolar-Junction-Transistor, BJT, also known as bipolar junction transistor) based on GP (Gummel-Poon) model type transistor) modeling method. Background technique [0002] During the production process of bipolar transistors, there will be some differences in their electrical characteristic parameters due to many reasons such as uneven distribution of process conditions, parasitic resistance, distribution of PN junction impurities, and small changes in device size. These differences will usually have a statistical distribution. [0003] Usually, the wafer foundry will provide circuit design customers with an angle model based on the range of factory process parameters in the bipolar transistor simulation model. The simulation of this angle model by the circuit designer can onl...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 张昊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP