non-volatile memory device

Abstract

A nonvolatile memory device is provided, comprising: a substrate; a plurality of memory cells stacked in a direction perpendicular to a base; a word line connected to the memory cells; a ground selection transistor between the memory cells and the substrate; A select line connected to the ground select transistor; a bit line on the memory cell; and a string select transistor between the memory cell and the bit line. In the erase operation, the ground selection line is floated at a time when a certain time elapses after the erase voltage is supplied to the substrate, and the ground selection line is floated at different times according to temperature.

Description

[0001] This patent application claims priority from Korean Patent Application No. 10-2015-0081808 filed on June 10, 2015, the entire contents of which are hereby incorporated by reference. technical field [0002] The present disclosure relates to semiconductor memory, and more particularly, to a nonvolatile memory device and a method of erasing the nonvolatile memory device. Background technique [0003] Semiconductor memory devices can be classified into volatile semiconductor memory devices and nonvolatile semiconductor memory devices. Volatile semiconductor memory devices have a disadvantage of losing their stored data when their power supply is interrupted, although they have high read / write speeds. Nonvolatile semiconductor memory devices retain their stored data even when their power supplies are interrupted. Therefore, non-volatile memory devices are used to store content that must be preserved regardless of power supply. In particular, since flash memory has a hig...

AI Technical Summary

Problems solved by technology

Volatile semiconductor memory devices, although having high read / write speeds, have the disadvantage of losing their stored data when their power supply is interrupted

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