Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An anti-jamming image sensor

An image sensor, photosensitive resin technology, applied in semiconductor devices, electric solid state devices, radiation control devices, etc., can solve the problems of inability to sense and limit the application range of sensors, and achieve the effect of avoiding solder ball occlusion and preventing electromagnetic interference.

Active Publication Date: 2019-11-05
JIANGSU JUNLONG ELECTRIC TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sensor can only sense the light on the front side, but not the light on the back side, which limits the application range of the sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An anti-jamming image sensor
  • An anti-jamming image sensor
  • An anti-jamming image sensor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0028] see figure 2 , an anti-interference image sensor 2, comprising:

[0029] A first substrate 21a, which may be a silicon substrate, on which electronic components (light receiving regions) are formed, the first substrate 21a includes a front surface having a first light receiving region 22a and a rear surface opposite to the front surface ;

[0030] A silicon substrate 31, the silicon substrate 31 comprising a front surface with a groove 25 and a back surface opposite to the front surface, the depth of the groove 25 being smaller than the thickness of the silicon substrate 31;

[0031] The second substrate 21b is arranged at the bottom of the groove 25, the second substrate 21b includes a front with a second light receiving area 22b and a back opposite to the front, the front of the second substrate 21b Coplanar with the front surface of the silicon substrate 31, the bottom of the groove 25 should be far away from the first light receiving region 22a;

[0032] The bac...

no. 2 example

[0042] see image 3 , an anti-interference image sensor 3, comprising:

[0043] A first substrate 21a, which may be a silicon substrate, on which electronic components (light receiving regions) are formed, the first substrate 21a includes a front surface having a first light receiving region 22a and a rear surface opposite to the front surface ;

[0044] A silicon substrate 31, the silicon substrate 31 comprising a front surface with a groove 25 and a back surface opposite to the front surface, the depth of the groove 25 being smaller than the thickness of the silicon substrate 31;

[0045] The second substrate 21b is arranged at the bottom of the groove 25, the second substrate 21b includes a front with a second light receiving area 22b and a back opposite to the front, the front of the second substrate 21b Coplanar with the front surface of the silicon substrate 31, the bottom of the groove 25 should be far away from the first light receiving region 22a;

[0046] The back...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an anti-interference image sensor. The sensor comprises a first substrate, a silicon substrate and a second substrate; the first substrate comprises a front side with a first light reception area and a back side opposite to the front side; the silicon substrate includes a front side with a groove and a back side opposite to the front side; the second substrate is arranged in the bottom of the groove, the second substrate comprises a front side including a second light reception area and a back side opposite to the front side, and the front side of the second substrate and the back side of the silicon substrate are coplanar; and the back side of the first substrate is bonded to the front side of the silicon substrate via a Fe-Co alloy layer.

Description

technical field [0001] The invention relates to the sensor field of sensitive components, in particular to the design of an anti-interference image sensor. Background technique [0002] The simplest electronic device in the photosensitive sensor is the photoresistor, which can sense the light and dark changes of the light, output a weak electrical signal, and control the automatic switch of the LED lamp through simple electronic circuit amplification. Therefore, it is widely used in automatic control and household appliances. For remote lighting fixtures, such as: automatic brightness adjustment in TVs, automatic exposure in cameras; Stop device and anti-theft alarm device Medium [0003] Photosensitive sensor is one of the most common sensors. It has a wide variety, mainly including: photocell, photomultiplier tube, photoresistor, phototransistor, solar cell, infrared sensor, ultraviolet sensor, fiber optic photoelectric sensor, color sensor, CCD and CMOS image sensor, et...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14625H01L27/14636
Inventor 王汉清
Owner JIANGSU JUNLONG ELECTRIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products