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Semiconductor device

一种半导体、鳞状的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，能够解决模塑树脂剥离等问题，达到密接力提高、小型化生产性和可靠性的效果

Active Publication Date: 2017-03-01
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, it is well known that the molded resin is easily peeled off from the lead frame due to repeated thermal stress in the use environment

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0040] Next, the semiconductor device according to Embodiment 1 of the present invention will be described based on the drawings. figure 1 An example of the structure of the resin-molded semiconductor device according to Embodiment 1 is shown. The semiconductor device 100 according to Embodiment 1 is configured to include a semiconductor element 1 , a lead frame 2 , wires 5 , inner leads 6 , external terminals 7 , and the like. In addition, in all the following drawings, the same reference numerals are assigned to the same or corresponding parts in the drawings.

[0041] The semiconductor element 1 is, for example, an IGBT, MOSFET, IC chip, LSI chip, or the like, and is mounted on the upper surface of the lead frame 2 via a bonding member 4 such as solder or silver. The lead frame 2 on which the semiconductor element 1 or other electronic components are mounted is composed of a copper plate or a copper alloy plate, and its surface is coated with metal plating (not shown) suc...

Embodiment approach 2

[0072] The overall structure of the semiconductor device according to the second embodiment of the present invention is the same as that of the above-mentioned first embodiment. figure 1 , and omit the description of each part. Figure 15 is a plan view showing the scale portion 3a of the semiconductor device 100 according to Embodiment 2, Figure 16 is in Figure 15 Sectional view obtained after section C-C is shown.

[0073] The scale portion 3 a of the second embodiment has an exposed portion 2 c where the lead frame 2 under the metal plating layer 30 , that is, copper or a copper alloy is exposed, near the center portion with a predetermined width W. The other structures are the same as those of the scale portion 3 in the first embodiment described above. Compared with the metal plating layer 30 , the exposed copper or copper alloy has higher adhesion to the molding resin 8 , and therefore, compared with the first embodiment described above, the peeling of the molding ...

Embodiment approach 3

[0078] In Embodiment 3 of the present invention, an example in which the scale portion 3 is applied to a semiconductor device having a structure different from that of the semiconductor device 100 in Embodiment 1 will be described. Figure 17 A semiconductor device 101 according to Embodiment 3 is shown. The semiconductor device 101 includes an electronic component 10 bridge-mounted so as to straddle between two separated regions of the lead frame 2 . The electronic component 10 is a capacitor, a thermistor, or the like.

[0079]In Embodiment 3, the two regions of the lead frame 2 on which the electronic component 10 is bridge-mounted may be a region where the semiconductor element 1 is mounted and a region where the semiconductor element 1 is not mounted, two regions where the semiconductor element 1 is mounted, and a region where the semiconductor element 1 is not mounted. Either of the two regions of the semiconductor element 1 .

[0080] When the electronic component 10 ...

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PUM

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Abstract

A lead frame (2) having a surface thereof plated with a metal is provided with a scale-like section (3) formed by deforming the metal plating into a scale-shape by continuously performing spot irradiation of laser. The scale-like section (3) is disposed at a discretionary area of the lead frame (2), for instance, an area close to a gate break mark (8a), an outer peripheral area in a region sealed by means of a molding resin (8), and a peripheral area of a semiconductor element (1). Due to anchor effects caused by means of the scale-like section (3), adhesion between the lead frame (2) and the molding resin (8) is improved, and peeling of the molding resin (8) from the lead frame (2) can be suppressed.

Description

technical field [0001] The present invention relates to a resin molded semiconductor device, and in particular to improvement of the adhesiveness between a lead frame and a molding resin. Background technique [0002] In semiconductor devices, copper plates or copper alloy plates are used for lead frames for mounting semiconductor elements, and metal plating such as gold, silver, nickel, or tin is applied to the surface for the purpose of improving corrosion resistance and heat resistance. Most of them are nickel plated. [0003] On the other hand, since the surface of the lead frame is covered with metal plating, the adhesion to molding resins such as epoxy resins used for transfer molding may decrease. Therefore, immediately after transfer molding, initial peeling occurs between the lead frame and the molding resin. Also, it is well known that the molded resin is easily peeled off from the lead frame due to repeated thermal stress in the use environment. [0004] As a c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/28
CPCH01L2924/181H01L2224/40245H01L24/40H01L2224/48091H01L2224/73265H01L2924/13091H01L2924/13055H01L23/3107H01L23/3142H01L21/565H01L2224/40095H01L2924/18301H01L23/4334H01L23/49524H01L23/49582H01L2224/73221H01L2224/48247H01L2224/84801H01L24/37H01L2224/37147H01L23/4952H01L23/49548H01L24/84H01L2924/00012H01L2924/00014H01L2924/00H01L2224/32245H01L24/36H01L23/3114H01L23/49513H01L23/562
Inventor 梶原孝信中岛大辅大前胜彦
Owner MITSUBISHI ELECTRIC CORP
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