Thin Film Transistor Substrate and Display Using the Same
一种薄膜晶体管、基板的技术,应用在电固体器件、半导体器件、电气元件等方向,能够解决低功耗有限等问题,达到低功耗属性的效果
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no. 1 approach
[0031] Reference figure 1 , We will explain the first embodiment of the present disclosure. figure 1 It is a cross-sectional view illustrating the structure of a thin film transistor substrate formed with two different types of thin film transistors for a flat panel display according to the first embodiment of the present disclosure. Here, we will mainly use cross-sectional views for explanation, because, for convenience, the cross-sectional views clearly show the main features of the present disclosure, and plan views are not used.
[0032] Reference figure 1 The thin film transistor substrate for a flat panel display according to the first embodiment includes a first thin film transistor T1 and a second thin film transistor T2 provided on the same substrate SUB. The first thin film transistor T1 and the second thin film transistor T2 may be disposed separately from each other, or they may be disposed within a relatively close distance. Otherwise, the two thin film transistors a...
no. 2 approach
[0068] In the following, refer to image 3 , We will describe the second embodiment of the present disclosure. image 3 It is a cross-sectional view illustrating the structure of a thin film transistor substrate formed with two different types of thin film transistors for a flat panel display according to the second embodiment of the present disclosure.
[0069] In the first embodiment, in order to form a storage capacitor, the first storage capacitor electrode ST1 and the second storage capacitor electrode ST2 overlap the passivation layer PAS including the oxide layer SIO therebetween. In order to ensure surface properties and uniformity, the oxide layer SIO should have at least thickness of. Therefore, the interposed between the first storage capacitor electrode ST1 and the second storage capacitor electrode ST2 has at least The thickness of the oxide layer SIO forms a storage capacitor.
[0070] The oxide layer SIO has a lower dielectric constant (or permittivity) than the ni...
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