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Graphene silicon-based solar cell and manufacturing method therefor

A technology of a solar cell and a manufacturing method, applied in the field of solar cells, can solve the problem of low efficiency, and achieve the effects of increasing work function, improving quantum efficiency, and reducing charge recombination effect

Inactive Publication Date: 2017-03-15
戚明海
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition to crystalline silicon, the application of graphene in other types of solar cells has also been studied, such as organic solar cells, compound solar cells, etc., but the obtained efficiencies are not high

Method used

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  • Graphene silicon-based solar cell and manufacturing method therefor

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Embodiment 1

[0032] Such as figure 1 As shown, a graphene silicon-based solar cell has a back metal electrode 1, a p-type silicon substrate 2, an n-type silicon thin layer 3, an n-type doped graphene layer 4, and a silicon nitride film 5 from bottom to top. , PMMA layer 6 and metal front electrode 7, metal front electrode 7 penetrates PMMA layer 6, silicon nitride film 5, n-type doped graphene layer 4 contacts with n-type silicon thin layer 3, n-type silicon thin layer 3 There is a through hole on the top, and an n-type doped graphene layer 4 is arranged on the surface of the n-type silicon thin layer 3 and the exposed surface of the through hole, wherein the metal front electrode 7 is an Ag electrode.

[0033] A method for manufacturing a graphene silicon-based solar cell, comprising the following steps:

[0034] S1. Immerse the p-type silicon substrate in the chemical texturing solution to form a textured structure on the surface of the p-type silicon substrate 2. The chemical texturing...

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Abstract

The invention relates to a graphene silicon-based solar cell and a manufacturing method therefor. The solar cell comprises a back surface metal electrode, a p type silicon substrate, an n type silicon thin layer, an n type doped graphene layer, a silicon nitride thin film, a PMMA layer and a metal front surface electrode from the bottom up in sequence, wherein the metal front surface electrode penetrates the PMMA layer, the silicon nitride thin film and the n type doped graphene layer to be in contact with the n type silicon thin layer; a through hole is formed in the n type silicon thin layer; and the n type doped graphene layer is arranged on the surface of the n type silicon thin layer and the surface exposed out of the through hole. The graphene silicon-based solar cell manufactured by the manufacturing method has the advantages of high photoelectric conversion efficiency and simple process, and is suitable for popularization.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a graphene silicon-based solar cell and a manufacturing method thereof. Background technique [0002] With the development of modern industry, the global energy crisis and air pollution problems have become increasingly prominent. As an ideal renewable energy source, more and more countries have paid attention to solar energy. Carrying out solar cell research and developing the photovoltaic power generation industry will contribute to the sustainable development of national energy. is of great significance. A solar cell is a device that uses the photovoltaic effect of semiconductor materials to convert light energy into electrical energy. In recent years, the most mature silicon-based semiconductor PN junction solar cells are facing several major problems such as high energy consumption, high cost, and high pollution, and bottlenecks have emerged in related technologies an...

Claims

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Application Information

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IPC IPC(8): H01L31/078H01L31/0216H01L31/028H01L31/18
CPCH01L31/02167H01L31/02168H01L31/028H01L31/078H01L31/1804Y02E10/547Y02P70/50
Inventor 戚明海
Owner 戚明海
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