A device for producing polysilicon and its application

Abstract

The invention relates to a polycrystalline silicon production device and application thereof. The polycrystalline silicon production device a concentric cylinder made of silicon, a solid bar made of silicon, an insulating plate, an insulating spacer sleeve and a collection unit, wherein the solid bar is arranged in the center of the concentric cylinder; the solid bar and the concentric cylinder are fixed to the lower part of the insulating plate; the insulating spacer sleeve is arranged on the outer wall of the concentric cylinder; the collection unit is arranged at the bottom; the upper part of the concentric cylinder and the solid bar is provided with an electrode connected to a power supply; a gap between the concentric cylinder and the solid bar forms a reaction channel; and the device is further provided with a gas channel port. Compared with the prior art, the reaction channel is formed by the solid bar and concentric cylindrical made of silicon in the invention, so that a contact surface during silicon deposition and melting is a silicon-silicon surface, the molten silicon is prevented from being polluted as a result of contact with other materials, and introduction of impurities is avoided, thereby ensuring that the quality of the produced polycrystalline silicon is guaranteed and the produced polycrystalline silicon is not polluted; and the deposited polycrystalline silicon is heated and molten through contact conduction or arc discharge, thereby realizing continuous production and achieving high production efficiency.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a device for producing polysilicon and its application. Background technique [0002] Polysilicon is the main raw material for manufacturing semiconductors and solar cells. At present, silicon-containing compounds are mainly used to reach the chemical reaction deposition temperature, and they are obtained by reaction at 575°C-1450°C. Common silicon-containing compounds include monosilane, disilane, trichlorosilane, Silicon tetrachloride, etc. [0003] The most used in industry is the Siemens method, which uses trichlorosilane (SiHCl 3 ) is in contact with silicon rods heated to about 1100°C to deposit polysilicon through chemical reactions. When the polysilicon accumulated silicon rod grows to a certain size, stop the reaction, open the reactor bell, take out the polysilicon rod, reinstall the silicon core, and start the next production. This method is relativel...

AI Technical Summary

Problems solved by technology

The production efficiency of this method is high, and the contact time between the silicon melt and the base material on the precipitation surface is shortened to reduce the pollution caused by the contact between the base material and the silicon melt, but there is still the possibility of contact between the silicon melt and the base material surface , leading to the contamination of polysilicon by the base material, making it difficult to obtain high-quality polysilicon for semiconductor applications

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