Parameter Extraction Method of Integrated Gate Commutated Thyristor Drive and Freewheeling Circuit
A technology for commutating thyristors and parameter extraction, which is applied in electrical digital data processing, CAD circuit design, and special data processing applications, and can solve problems that do not involve the operating conditions of the freewheeling circuit of the IGCT gate drive shutdown circuit.
Inactive Publication Date: 2019-12-20
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The document "AMethod to Extract the Accurate Junction Temperature of anIGCT During Conduction Using Gate–Cathode Voltage" focuses on extracting the junction temperature of the IGCT during operation by combining experiments and simulations, while the document "The Influence of Antiparallel Diodes on the IGCT Turn-off Process" Only the influence of IGCT anti-parallel diodes on the IGCT turn-off process is analyzed, and the experimental results are used to show that the influence does exist, but the influence of the operating conditions of the entire freewheeling circuit including the IGCT gate drive turn-off circuit is not involved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0047] figure 1 It is a flowchart of the parameter extraction method of the present invention. Depend on figure 1 It can be seen that the present invention includes the following steps: Step S1: analyze the operating characteristics of the integrated gate commutated thyristor drive circuit and the freewheeling circuit, and propose an equivalent circuit for the transient freewheeling process of the integrated gate commutated thyristor; step S2: according to the step The equivalent circuit obtained in S1 deduces the expression of the terminal voltage of the integrated gate current thyristor in different states; Step S3: Carry out the single-tube test experiment of the integrated gate commutated thyristor with a specific clamping voltage and turn-off current, and use the integrated gate Integrating the experimental results of the electrical quan...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A parameter extraction method for integrated gate commutated thyristor drive turn-off circuit and continuing current circuit. The method consists of the following steps: S1. analyzing running characteristics of the integrated gate commutated thyristor drive circuit and the continuing current circuit, proposing an equivalent circuit during the integrated gate commutated thyristor turn-off transient continuing current process; S2. according to the equivalent circuit obtained in S1, deducing voltage expressions of the integrated gate commutated thyristor in different states; S3, carrying out a unijunction transistor testing experiment of the integrated gate commutated thyristor, by virtue of a specific clamping voltage and experiment results of electric quantities of the integrated gate commutated thyristor and the continuing current circuit when current is turned off during the integrated gate commutated thyristor turn-off transient process, proposing the parameter extraction method for the integrated gate commutated thyristor drive turn-off circuit and continuing current circuit; and S4,for the integrated gate commutated thyristor, carrying out experiments on different voltage grades and the turn-off circuits, through processing of the different experiment results, determining parameter values of the integrated gate commutated thyristor drive turn-off circuit and continuing current circuit.
Description
technical field [0001] The invention relates to a method for extracting parameters of an integrated gate commutation thyristor driving shut-off circuit and a freewheeling circuit. Background technique [0002] The integrated gate commutated thyristor (IGCT) is composed of the core device gate commutated thyristor (GCT) and the integrated gate circuit. , GTO) as the basis, with the help of transparent anode, buffer layer structure and gate hard drive technology, the IGCT has more powerful switching characteristics, avoiding the coexistence of transistors and thyristors during the turn-off transient process of GTO, and inheriting the GTO's high-power processing capability has attracted widespread attention from researchers around the world, and the related research is extremely extensive, prompting it to be widely used in medium and high voltage converters and related equipment. The turn-off capability of the IGCT is closely related to the integrated inductance of the gate dr...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG06F30/39
Inventor 王佳蕊孔力周亚星
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI