A kind of semiconductor array device testing method

Abstract

The invention relates to a method for testing a semiconductor array device, which comprises the steps of processing the semiconductor array device to be tested to expose a tungsten plug layer; etching at a predetermined distance above the gate conductive layer of the semiconductor array device to be tested until the gate is exposed. Electrode conductive layer; fill conductive medium in the etching place to form additional contacts; contact the nano-probes that should be in contact with the gate contacts with the additional contacts to test the electrical characteristics of the semiconductor unit within the preset range of the additional contacts. The beneficial effect of the present invention is: for the semiconductor unit corresponding to the drain contact and the source contact that cannot be located on the test machine with the gate contact at the same time, an additional contact that is connected to the gate is added near it Make this additional contact and the drain contact and source contact corresponding to the semiconductor unit can be located on the test machine at the same time, use this additional contact to replace the gate contact, so as to realize the use of nano probe tester to test the semiconductor The electrical characteristics of the unit.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a semiconductor array device testing method. Background technique [0002] In the failure analysis of semiconductor devices, a nanoprobe tester is usually used to test the electrical characteristics of the semiconductor device on the tungsten plug layer of the semiconductor device, and analyze the failure cause of the semiconductor device according to the electrical characteristics. The specific operation is to connect a nanoprobe to the tungsten plug corresponding to the drain, source and gate of the semiconductor device, apply different voltages on the drain, source and gate through the nanoprobe, and obtain the corresponding electrical properties. However, the characteristics of semiconductor array devices (such as memory chips) are: in the tungsten plug layer, each row of semiconductor units shares a gate contact, and the drain contact and source contact are di...

AI Technical Summary

Problems solved by technology

However, the characteristics of semiconductor array devices (such as memory chips) are: in the tungsten plug layer, each row of semiconductor units shares a gate contact, and the drain contact and source contact are different with the position of the semiconductor unit. ;Therefore, limited by the area of ​​the testing machine, the nanoprobe instrument can only test the electrical characteristics of the semiconductor unit within a certain range close to the gate contact; for the semiconductor unit beyond this range, because its drain contact and source The pole contact and the gate contact cannot be placed on the testing machine at the same time, so its electrical characteristics cannot be tested by the nano probe instrument

Images