A kind of preparation method of LED epitaxial wafer
A technology of LED epitaxial wafers and epitaxial wafers, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as poor anti-static breakdown capability, reduced diode performance, and reduced internal quantum efficiency, so as to reduce internal leakage and improve reflection. To the voltage, reduce the effect of operating speed
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Embodiment 1
[0034] h 2 Purify the substrate at high temperature in the environment; H at 1000°C 2 Under the atmosphere, feed 100L / min of H 2 , keep the reaction chamber pressure at 100mbar, and process the substrate for 8min.
[0035] The epitaxial wafer includes a multi-quantum well layer in which a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure are sequentially formed from bottom to top on the substrate , functional layer, light emitting layer and P-type GaN layer.
[0036] Using the chemical vapor deposition method of metal organic compounds, at 550 ° C, the pressure of the reaction chamber is maintained at 300 mbar, and the flow rate of NH is 10000 sccm 3 , 50sccm TMGa, 100L / min H 2 1. Growing a low-temperature buffer layer GaN with a thickness of 20 nm on the substrate.
[0037] Grow a U-type GaN layer in the low-temperature buffer layer GaN: first grow a 2D-type GaN...
Embodiment 2
[0046] h 2 Purify the substrate at high temperature in the environment; H at 1050°C 2 Under the atmosphere, feed 120L / min of H 2 , keep the reaction chamber pressure at 200mbar, and process the substrate for 9 minutes.
[0047] The epitaxial wafer includes a multi-quantum well layer in which a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure are sequentially formed from bottom to top on the substrate , functional layer, light emitting layer and P-type GaN layer.
[0048] Using the chemical vapor deposition method of metal organic compounds, at 570 ° C, the pressure of the reaction chamber is maintained at 450 mbar, and the flow rate of NH is 15000 sccm 3 , 75sccm TMGa, 120L / min H 2 1. Growing a low-temperature buffer layer GaN with a thickness of 20nm-40nm on the substrate.
[0049] Grow a U-type GaN layer in the low-temperature buffer layer GaN: first grow a 2D...
Embodiment 3
[0058] h 2 Purify the substrate at high temperature in the environment; H at 1100°C 2 Under the atmosphere, feed 130L / min of H 2 , keep the reaction chamber pressure at 300mbar, and process the substrate for 10min.
[0059] The epitaxial wafer includes a multi-quantum well layer in which a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure are sequentially formed from bottom to top on the substrate , functional layer, light emitting layer and P-type GaN layer.
[0060] Using the chemical vapor deposition method of metal organic compounds, at 580 ° C, the pressure of the reaction chamber is maintained at 600 mbar, and the flow rate of NH is 20000 sccm 3 , 100sccm TMGa, 130L / min H 2 1. Growing a low-temperature buffer layer GaN with a thickness of 40 nm on the substrate.
[0061] Grow a U-type GaN layer in the low-temperature buffer layer GaN: first grow a 2D-type G...
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