Semiconductor device and manufacturing method thereof
A semiconductor and conductive technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of shrinking surface area of n-type emitter region, increasing contact resistance, and higher on-state voltage
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no. 1 approach
[0080]
[0081] As a semiconductor device 1A according to the first embodiment of the present invention, as an example, Figure 1 to Figure 4 As shown, a part of the semiconductor substrate is an IGBT having a trench structure in which the drift layer 3 is formed.
[0082] Such as figure 1 As shown, the X direction and the Y direction orthogonal to each other are defined in the main surface of the semiconductor substrate including the drift layer 3, such as figure 2 As shown, the mesa regions 5 are respectively divided by the trenches 4 adjacent to each other in the X direction. according to figure 1 It can be seen that a plurality of trenches 4 and mesa regions 5 are periodically arranged along the X direction, and form a planar pattern extending parallel to stripes along the Y direction.
[0083] A bipolar transistor having a trench structure is formed by electrically connecting a plurality of transistor cells 2 in a fine pattern in parallel. Thereby, a multi-cell s...
no. 2 approach
[0216] In the first embodiment described above, the semiconductor device 1A as an independent device including a single IGBT has been described. On the other hand, in the second embodiment, a semiconductor device 1B in which a trench-structured IGBT and a diode are integrated will be described.
[0217] Such as Figure 29 to Figure 31 As shown, the semiconductor device 1B according to the second embodiment of the present invention will be formed of, for example, single crystal silicon - A part of the type semiconductor substrate constitutes the drift layer 3 . Furthermore, the semiconductor device 1B according to the second embodiment is a reverse conducting IGBT (Reverse Conducting IGBT, RC-IGBT) in which an IGBT having a trench structure and a diode are connected in antiparallel to a semiconductor substrate.
[0218] Such as Figure 29 As shown, mutually orthogonal X directions and Y directions are defined within the main surface of the semiconductor substrate including t...
no. 3 approach
[0249]
[0250] Such as Figure 32 to Figure 34 As shown, the semiconductor device 1C according to the third embodiment of the present invention has substantially the same structure as the above-mentioned semiconductor device 1A according to the first embodiment of the present invention, but the structure of the gate insulating film 36 is different. A semiconductor device 1C according to the third embodiment includes a gate insulating film 36 having a different film thickness instead of the gate insulating film 6 of the first embodiment.
[0251] Such as Figure 32 to Figure 34 As shown, the semiconductor device 1C according to the third embodiment of the present invention includes, like the semiconductor device 1A according to the above-mentioned first embodiment, the drift layer 3 constituted by a part of the semiconductor substrate. In addition, the semiconductor device 1C according to the third embodiment includes the mesa region 5 defined on the drift layer 3 so as to ...
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Abstract
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