Semiconductor device

A semiconductor and device technology, applied in the field of collector structure and its manufacturing, can solve the problems of high substrate price, substrate thickness freedom limitation, etc., to prevent the adverse influence of device characteristics, reduce loss, and ensure breakdown capacity Effect

Inactive Publication Date: 2005-09-07
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the price of the substrate is increased, and the degree of freedom of the thickness of the substrate is also limited.

Method used

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  • Semiconductor device
  • Semiconductor device
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Embodiment Construction

[0143] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0144] (Embodiment 1)

[0145] figure 1 It is a schematic cross-sectional view showing the structure of the semiconductor device in Embodiment 1 of the present application. refer to figure 1 , the semiconductor device of this embodiment has a thickness t of, for example, 50 to 250 μm 1 A trench type IGBT formed on a semiconductor substrate. no - Silicon substrate 1 has, for example, about 1×10 14 cm -3 concentration. in the n - The first main surface side of the silicon substrate 1 is formed, for example, by a concentration of about 1×10 15 ~1×10 18 cm -3 and a p-type body region 2 made of a p-type semiconductor having a diffusion depth of about 1.0 to 4.0 μm from the first main surface. On the first main surface of the p-type body region 2, formed by, for example, a concentration of 1×10 18 ~1×10 20 cm -3 and an n-type emitter region 3 made of an n-type semicondu...

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Abstract

The invention discloses a semiconductor device, comprising a semiconductor substrate with the opposite first and second primary surfaces; and a component comprising an insulating gate field effect transistor on the side of the said first primary surface, where the primary current of this transistor flows in between the two primary surfaces, and the said component has an impurity diffusion layer with an impurity activating ratio below 50% on the second primary surface.

Description

[0001] This application is a divisional application of the original application with application number 01809999.8, and the filing date of the original application is February 1, 2001. technical field [0002] The present invention relates to a semiconductor device and a manufacturing method thereof, and to a collector electrode structure on the back surface of a semiconductor substrate in thinning the semiconductor substrate and a manufacturing method thereof. Background technique [0003] In the field of high-voltage semiconductor devices that control voltages exceeding hundreds of V, since the currents they handle are also large, device characteristics that suppress heat generation, that is, suppress losses, are required. In addition, as a gate drive method for controlling those voltages and currents, a voltage drive element with a small drive circuit and a small loss in the drive circuit is desired. [0004] In recent years, insulated gate bipolar transistors, ie, IGBTs,...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/739H01L29/78
Inventor中村勝光楠茂中村秀城
OwnerMITSUBISHI ELECTRIC CORP