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Global shutter CMOS pixel unit and image collection method

A pixel unit and global shutter technology, applied in the field of image sensors, can solve the problems of reducing frame rate, complex digital algorithm, weakening global shutter pixel speed, etc., to achieve the effect of improving dynamic range, eliminating process deviation, and improving consistency

Active Publication Date: 2017-05-31
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional global shutter CMOS image sensor has a low dynamic range in one exposure output image. Although multiple exposures can be used to synthesize images to achieve high dynamic images, the digital algorithm is complex and will greatly reduce the frame rate, weakening the advantages of high-speed global shutter pixels.

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  • Global shutter CMOS pixel unit and image collection method

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Embodiment Construction

[0021] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0022] The following is attached Figure 1~2 The present invention will be described in further detail with specific examples. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0023] see figure 1 , the global shutter CMOS pixel unit of this embodiment includes: a power supply, a pixel generating unit 1, a signal sampling and holding unit 2, and a signal output unit 3; the power supply is connected to t...

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Abstract

The invention provides a global shutter CMOS pixel unit and an image collection method. The pixel unit comprises a power supply, a pixel generation unit, a signal sample hold unit and a signal output unit. The output end of the pixel generation unit is connected with the input end of the signal sample hold unit. The output end of the signal sample hold unit is connected with the input end of the signal output unit. According to the unit and the method, a logarithm relationship is set for pixel output voltage-photo-generated current; the dynamic range of signal output is effectively improved; high-speed read is carried out and the dynamic range of image output signals is improved at the same time; moreover, the pixel unit provided by the invention is characterized by eliminating the technology bias; and the consistency of the image signals output by the pixel unit is effectively improved.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a global shutter CMOS pixel unit and an image acquisition method. Background technique [0002] Due to its high-speed output advantages, global shutter CMOS image sensors have been widely used in monitoring, scientific applications, industrial vision and other fields. At present, in many applications, high-speed and high-dynamic imaging has become an increasingly widespread demand for image sensors. [0003] The traditional global shutter CMOS image sensor has a low dynamic range in one exposure output image. Although multiple exposures can be used to synthesize images to achieve high dynamic images, the digital algorithm is complex and will greatly reduce the frame rate, weakening the advantages of high-speed global shutter pixels. Contents of the invention [0004] In order to overcome the above problems, the present invention aims to provide a high dynamic global shut...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/235H04N5/3745H04N5/378
CPCH04N23/73H04N25/77H04N25/78H04N25/573H04N25/771H04N25/616H04N25/581H04N25/75H04N25/76H04N25/709
Inventor 段杰斌任铮蒋宇温建新皮常明
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT