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Bandgap Reference Circuit

A reference circuit and reference voltage technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of easy drop of reference voltage VBG, poor driving ability, etc., and achieve the effect of saving area

Active Publication Date: 2018-04-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The driving ability of the existing bandgap reference circuit is poor. When the output terminal of the reference voltage VBG has a current draw, the current can only be provided by the mirror current of the PMOS transistor PM5, so that the current flowing through R6 and the transistor Q4 will be reduced. or not, thus the reference voltage VBG easily drops

Method used

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Examples

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Embodiment Construction

[0020] combine figure 2 As shown, this figure is an embodiment of an improved bandgap reference circuit, which also includes a current bias circuit that provides a bias current for the bandgap reference circuit in this embodiment, and a start-up circuit of the current bias circuit .

[0021] The startup circuit of the current bias circuit includes: a fourth PMOS transistor PSTP, a fifth PMOS transistor PST and a fourth NMOS transistor Ncap.

[0022] The source of the fourth PMOS transistor PSTP and the source of the fifth PMOS transistor PST are connected to the power supply voltage terminal VDD, and their gates are connected to the gates of the second PMOS transistor P0 and the third PMOS transistor PM1 in the current bias circuit. connected. The drain of the fourth PMOS transistor PSTP is connected to the gate of the fifth PMOS transistor PST and the gate of the fourth NMOS transistor Ncap. The source and drain of the fourth NMOS transistor Ncap are grounded.

[0023] T...

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Abstract

The invention discloses a band-gap reference circuit comprising a first PMOS transistor (Pmirr), a first NMOS transistor (NMO), a first operational amplifier (YF), a first PNP transistor (Q0), a second PNP transistor (Q1), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5) and a sixth resistor (R0). The band-gap reference circuit provided by the invention can provide certain current driving capacity for the output reference voltage VBG.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a bandgap reference circuit. Background technique [0002] Voltage reference circuit is the basic module in analog integrated circuit design, such as digital-to-analog converter (DAC), analog-to-digital converter (ADC), linear regulator (LDO) and other circuit designs are indispensable. The traditional bandgap reference circuit adopts the way of adding the negative temperature coefficient bipolar transistor voltage VBE and the positive temperature coefficient voltage VT to reduce the temperature coefficient of the output voltage. [0003] figure 1 It is a schematic diagram of an existing bandgap reference circuit, which includes a start-up circuit and a main body circuit of a bandgap reference. figure 1 Among them, the main circuit of the bandgap reference is composed of PMOS transistors PM3, PM4, PM5, operational amplifier YF2, resistors R6 and R7, triodes Q2, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/561
Inventor 周宁
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP