Display substrate mother board and its manufacturing method, ultraviolet light intensity monitoring method and equipment
A display substrate, light intensity monitoring technology, applied in optics, nonlinear optics, instruments, etc., can solve the problems of inability to monitor abnormal ultraviolet light intensity, liquid crystal alignment disorder, and occupying equipment production time.
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Embodiment 1
[0053] This embodiment provides a display substrate motherboard 1, such as figure 1 As shown, the display substrate motherboard 1 includes a plurality of display substrates 2, and at least one phototransistor 3 is arranged in the non-display area of the display substrate motherboard 1. After being irradiated by ultraviolet light, the TFT characteristic parameters of the phototransistor 3 can be change.
[0054] Wherein, the phototransistor 3 can be arranged in the non-display area of part of the display substrate 2, and can also be arranged in the area between the display substrates 2, as long as it is located in the non-display area of the display substrate motherboard 1, it will not affect the display substrate motherboard 1. The display area only needs to be illuminated by ultraviolet light.
[0055] Specifically, such as figure 2 As shown, the phototransistor includes a gate 5 formed on a substrate 4, a gate insulating layer 6, an active layer 7 located on the gat...
Embodiment 2
[0058] This embodiment provides a method for manufacturing a display substrate motherboard, which is used to manufacture the above-mentioned display substrate motherboard. The manufacturing method includes:
[0059] At least one photosensitive transistor is formed in the non-display area of the display substrate motherboard, and the TFT characteristic parameters of the photosensitive transistor can change after being irradiated by ultraviolet light.
[0060] In this embodiment, a phototransistor capable of sensing ultraviolet light is formed on the non-display area of the display substrate motherboard. By measuring and comparing the characteristic parameters of the phototransistor before and after receiving ultraviolet light, it is possible to monitor the impact on the display substrate motherboard during the photo-alignment process. The light intensity of the photoalignment UV light. Utilizing the display substrate motherboard of this embodiment can monitor the intensity ...
Embodiment 3
[0066] This embodiment provides a method for monitoring the intensity of ultraviolet light, using the above-mentioned display substrate mother board to monitor the intensity of ultraviolet light in the photo-alignment process, such as image 3 As shown, the method includes:
[0067] Step 101: Obtain the first TFT characteristic parameters of the phototransistor before performing photoalignment on the display substrate motherboard;
[0068] Step 102: after performing photo-alignment on the display substrate mother board, obtain the second TFT characteristic parameters of the phototransistor before the optical characteristics of the phototransistor change;
[0069] Step 103: Comparing the first TFT characteristic parameter and the second TFT characteristic parameter, and calculating the ultraviolet light intensity during the photo-alignment process.
[0070] In this embodiment, by measuring and comparing the characteristic parameters of the phototransistors of the display subst...
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