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Display substrate mother board and its manufacturing method, ultraviolet light intensity monitoring method and equipment

A display substrate, light intensity monitoring technology, applied in optics, nonlinear optics, instruments, etc., can solve the problems of inability to monitor abnormal ultraviolet light intensity, liquid crystal alignment disorder, and occupying equipment production time.

Active Publication Date: 2019-11-29
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the photo-alignment process, if the intensity of ultraviolet light is too low, the effective light energy received by the alignment film on the display substrate will be insufficient, resulting in abnormal alignment of the alignment film, disordered alignment of the liquid crystal, and poor alignment such as bright spots on the liquid crystal display panel. , therefore, it is necessary to monitor the UV light intensity during the photoalignment process
[0004] The existing ultraviolet light intensity monitoring method is to place a standard ultraviolet photodetector on the glass substrate and enter the optical alignment equipment when the optical alignment equipment is idle, to simulate the energy density of the ultraviolet light received by the substrate during the optical alignment process. However, the above method has the following disadvantages: the monitoring of the intensity of ultraviolet light takes up equipment production time, and when performing photoalignment on the film to be aligned on the display substrate, the standard ultraviolet photodetector cannot be placed in the photoalignment equipment, so it is impossible to monitor The UV light intensity during actual production may be different from the simulated results and the UV light intensity during actual production, and the abnormal UV light intensity caused by the fluctuation of alignment equipment in actual production cannot be detected

Method used

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  • Display substrate mother board and its manufacturing method, ultraviolet light intensity monitoring method and equipment
  • Display substrate mother board and its manufacturing method, ultraviolet light intensity monitoring method and equipment
  • Display substrate mother board and its manufacturing method, ultraviolet light intensity monitoring method and equipment

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Embodiment 1

[0053] This embodiment provides a display substrate motherboard 1, such as figure 1 As shown, the display substrate motherboard 1 includes a plurality of display substrates 2, and at least one phototransistor 3 is arranged in the non-display area of ​​the display substrate motherboard 1. After being irradiated by ultraviolet light, the TFT characteristic parameters of the phototransistor 3 can be change.

[0054] Wherein, the phototransistor 3 can be arranged in the non-display area of ​​part of the display substrate 2, and can also be arranged in the area between the display substrates 2, as long as it is located in the non-display area of ​​the display substrate motherboard 1, it will not affect the display substrate motherboard 1. The display area only needs to be illuminated by ultraviolet light.

[0055] Specifically, such as figure 2 As shown, the phototransistor includes a gate 5 formed on a substrate 4, a gate insulating layer 6, an active layer 7 located on the gat...

Embodiment 2

[0058] This embodiment provides a method for manufacturing a display substrate motherboard, which is used to manufacture the above-mentioned display substrate motherboard. The manufacturing method includes:

[0059] At least one photosensitive transistor is formed in the non-display area of ​​the display substrate motherboard, and the TFT characteristic parameters of the photosensitive transistor can change after being irradiated by ultraviolet light.

[0060] In this embodiment, a phototransistor capable of sensing ultraviolet light is formed on the non-display area of ​​the display substrate motherboard. By measuring and comparing the characteristic parameters of the phototransistor before and after receiving ultraviolet light, it is possible to monitor the impact on the display substrate motherboard during the photo-alignment process. The light intensity of the photoalignment UV light. Utilizing the display substrate motherboard of this embodiment can monitor the intensity ...

Embodiment 3

[0066] This embodiment provides a method for monitoring the intensity of ultraviolet light, using the above-mentioned display substrate mother board to monitor the intensity of ultraviolet light in the photo-alignment process, such as image 3 As shown, the method includes:

[0067] Step 101: Obtain the first TFT characteristic parameters of the phototransistor before performing photoalignment on the display substrate motherboard;

[0068] Step 102: after performing photo-alignment on the display substrate mother board, obtain the second TFT characteristic parameters of the phototransistor before the optical characteristics of the phototransistor change;

[0069] Step 103: Comparing the first TFT characteristic parameter and the second TFT characteristic parameter, and calculating the ultraviolet light intensity during the photo-alignment process.

[0070] In this embodiment, by measuring and comparing the characteristic parameters of the phototransistors of the display subst...

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Abstract

The invention provides a display substrate motherboard and preparation method thereof, ultraviolet light intensity monitoring method and device, and belongs to the technical field of displaying. At least one photosensitive transistor is arranged at the non-display area of the display substrate motherboard. After being subject to ultraviolet radiation, the TFT characteristic parameters of the photosensitive can change. Before the implementation of photo-alignment to the display substrate motherboard, the first TFT characteristic parameter of the photosensitive transistor is obtained. After the implementation of photo-alignment to the display substrate motherboard, before the change of the optical properties of the photosensitive transistor, the second characteristic parameter of the photosensitive transistor is obtained. The first TFT characteristic parameter is compared with the second TFT characteristic parameter to calculate the ultraviolet intensity in the photo-alignment process. The devices and methods can be used for monitoring the ultraviolet intensity in the photo-alignment process.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display substrate motherboard and a manufacturing method thereof, a method and equipment for monitoring ultraviolet light intensity. Background technique [0002] In the manufacturing process of LCD (Liquid Crystal Display, liquid crystal display panel), it is necessary to arrange an alignment film on the color filter substrate and the array substrate, so that the liquid crystal molecules maintain a specific initial orientation without the action of an electric field. The manufacturing method of the alignment film includes rubbing alignment (Rubbing) and photo alignment (Photo Alignment). [0003] Among them, the photo-alignment method is to irradiate the alignment film on the display substrate with ultraviolet light passing through the polarizer, so that the surface of the alignment film has optical anisotropy. Compared with the traditional rubbing alignment method, the phot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1337G02F1/13
CPCG02F1/1303G02F1/133788
Inventor 杨艳杜楠楠李建周永山李京鹏李东朝
Owner BOE TECH GRP CO LTD