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Semiconductor device and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Active Publication Date: 2020-06-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, scaling down these components may modify their characteristics beyond the expected performance range

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0078] The following disclosure provides many different embodiments, or examples, for implementing the various features of the invention. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are just examples, not intended to limit the present disclosure. For example, if the description mentions that a first feature is formed on a second feature, it may include an embodiment where the first and second features are in direct contact, or may include an additional feature that is formed on the first and second features. An embodiment between two features so that they are not in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in different instances. This repetition is for simplicity and clarity and does not prescribe a relationship between the different embodiments and / or configurations discussed.

[0079] Furthermore, spatially relative expressions such as "b...

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Abstract

A fuse structure and manufacturing method used in a semiconductor device. The fuse can be formed in the third metal layer and arranged vertically with the active elements on the underlying semiconductor substrate. In addition, the fuses in the third metal layer are formed thicker than the lower second metal layer.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and a manufacturing method thereof, in particular to a structure using a fuse in the semiconductor device and a manufacturing method thereof. Background technique [0002] As the size of a semiconductor device shrinks, the size of each individual component within the semiconductor device should also shrink, otherwise the component as a whole risks becoming a bottleneck for further device scaling. For example, as transistors or active devices shrink in size, other parts of the semiconductor device, such as dielectric layers and metallization layers that provide interconnectivity to active devices, should also shrink in size. In other cases, the overall dimensions of the device may remain the same. [0003] However, the scaling of dielectric and metallization layers creates problems of its own. For example, when the metallization layer is scaled down, any components formed in the met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/62H01L21/77H01L21/768
CPCH01L21/77H01L23/62H10B20/25H01L27/0207H01L23/5256H01L27/0617H01L21/82345H01L21/823842H10B69/00H01L21/8234
Inventor 于殿圣崔壬汾廖忠志
Owner TAIWAN SEMICON MFG CO LTD