A New Bandgap Reference Circuit Structure

Abstract

The invention provides a novel band-gap reference circuit structure. The novel band-gap reference circuit structure comprises a bias module, a positive temperature coefficient current generation module, a negative temperature coefficient current generation module and a current adduction module. The positive temperature coefficient current generation module comprises a first transistor connected to a first branch circuit of a first current mirror, a second transistor connected to a second branch circuit of the first current mirror, a first NMOS pipe connected to the first branch circuit of the first current mirror and a second NMOS pipe connected to the second branch circuit of the first current mirror. A grid electrode of the first NMOS pipe is connected to an emitting electrode of the first transistor. A grid electrode of the second NMOS pipe is connected to an emitting electrode of the second transistor. A drain electrode of the second NMOS pipe is connected to the first branch circuit of the second current mirror. A leak electrode of the first NMOS pipe is connected to the second branch circuit of the second current mirror. The positive temperature coefficient current is generated through the second branch circuit of the second current mirror. The novel band-gap reference circuit structure has the following beneficial effects: requirements for low voltage supply, low input and output, low power consumption and little occupation of layout are met.

Description

technical field [0001] The invention relates to the technical field of analog circuits, in particular to a novel bandgap reference circuit structure. Background technique [0002] The reference circuit can provide a relatively stable voltage and current when the temperature and power supply voltage change, and is an integral part of many digital and analog circuits. Because the bandgap reference has advantages in terms of temperature characteristics, supply voltage suppression, power consumption, and compatibility with CMOS processes, the bandgap reference is widely used in analog-to-digital converters (ADCs), digital-to-analog converters (DACs) , low dropout linear regulator (LDO), memory, power management and other CMOS process integrated circuits. [0003] Bandgap references have both voltage-mode and current-mode structures. The classic structure of the voltage mode is to obtain a temperature-independent reference voltage by adding a positive temperature coefficient vo...

AI Technical Summary

Problems solved by technology

[0004] However, with the continuous improvement of CMOS technology, the feature size is getting smaller and smaller, and the power supply voltage is also decreasing in a certain proportion. The voltage mode structure cannot meet the low voltage requirements, and the current mode cannot meet the low input and output requirements.

At the same time, in the face of the requirements of different applications, the traditional bandgap reference circuit uses an op amp, which consumes a certain amount of power consumption and layout area

Images