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SiC single crystal production method and SiC single crystal production device

A manufacturing method and a manufacturing device technology, which are applied in the field of manufacturing methods and SiC single crystal manufacturing devices, can solve problems such as hindering the growth of SiC single crystals, and achieve the effect of reducing temperature deviation

Inactive Publication Date: 2017-08-18
NIPPON STEEL CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there are many SiC polycrystals attached to the SiC single crystal grown on the seed crystal, it will hinder the growth of SiC single crystal

Method used

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  • SiC single crystal production method and SiC single crystal production device
  • SiC single crystal production method and SiC single crystal production device
  • SiC single crystal production method and SiC single crystal production device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0045][Overall structure of SiC single crystal manufacturing apparatus 100]

[0046] figure 1 It is an overall configuration diagram of the SiC single crystal manufacturing apparatus 100 of the first embodiment. like figure 1 As shown, the manufacturing device 100 includes a box body 1 , a heat insulating member 2 , a high-frequency heating coil 3 , a seed shaft driving mechanism 4 , a crucible driving mechanism 5 and a middle cover driving mechanism 6 .

[0047] The box body 1 is a frame body capable of accommodating the heat insulating member 2 , the high-frequency heating coil 3 , and the seed shaft 41 in the seed shaft driving mechanism 4 . The box 1 is also capable of housing a crucible 7 . When producing a SiC single crystal, the box 1 is water-cooled.

[0048] The crucible 7 is accommodated in the frame-shaped heat insulating member 2 . The crucible 7 is a frame with an open upper end. The crucible 7 can accommodate the Si—C solution 8 . The Si—C solution 8 is ...

no. 2 Embodiment approach

[0096] In the first embodiment, in order to suppress the temperature deviation between the vicinity of the Si—C solution 8 and the surrounding area, the fluctuation range ΔH1 of the distance between the middle cover 60 and the liquid surface 80 is adjusted within the reference value Ref1.

[0097] Moreover, when the liquid level 80 falls, the positional relationship (relative positional relationship in the height direction) between the liquid level 80 and the high frequency coil 3 changes. In this case, the heating conditions for heating the Si—C solution 8 by the high-frequency coil 3 are likely to change. Therefore, it is preferable to maintain the positional relationship between the liquid surface 80 and the high-frequency coil 3 when the crystal growth starts.

[0098] Figure 5 It is an overall configuration diagram of a SiC single crystal manufacturing apparatus 200 according to the second embodiment. refer to Figure 5 , compared with the manufacturing device 100 , t...

Embodiment

[0108] SiC single crystals were produced under the production conditions of Invention Example 1 to Invention Example 3, Comparative Example 1 and Comparative Example 2 shown in Table 1, and the quality of the obtained SiC single crystals was evaluated.

[0109] Table 1

[0110]

[0111] [Example 1 of the present invention]

[0112] For the raw material components of the Si—C solution, according to the atomic ratio, Si:Cr=0.6:0.4. The temperature (crystal growth temperature) of the portion near the seed crystal in the Si—C solution was 1900°C. The temperature gradient in the region near the seed crystal was 15°C / cm. The seed crystal used is a 4H polytype SiC single crystal, and its lower surface (crystal growth plane) is a (000-1) plane. The height of the meniscus at which crystal growth begins is 0.5 mm.

[0113] As a manufacturing device, used with figure 1 Manufacturing apparatus 100 with the same structure. In Example 1 of the present invention, the height posit...

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Abstract

Provided is an SiC single crystal production method allowing a temperature variation to be reduced in an Si-C solution even when a crystal growth is being carried out over a long time period. The SiC single crystal production method according to this embodiment comprises: a preparation step for preparing a production device (100) equipped with a crucible (7) in which raw materials for the Si-C solution are contained, a seed shaft (41) that has a seed crystal (9) attached to the lower extremity thereof, and an internal lid (60) capable of being positioned inside the crucible (7)and having a through-hole (60A) in the center, wherethrough the seed shaft (41) passes; a generation step for heating the raw materials inside the crucible (7) to generate the Si-C solution (8); a growth step for bringing the seed crystal (9) into contact with the Si-C solution (8) so as to produce the SiC single crystal over the seed crystal (9); and an internal lid adjustment step for displacing during the growth step one of the internal lid (60) and the crucible (7) relative to one another in the height direction whereby the range of the variation in the distance between the internal lid (60) and the Si-C solution (8) in the height direction is adjusted to be within a first reference range.

Description

technical field [0001] The present invention relates to a method and device for producing a single crystal, and more specifically, to a method for producing a single crystal of SiC and a device for producing a single crystal of SiC. Background technique [0002] As one of methods for producing a single crystal of silicon carbide (SiC), there is a solution growth method. In the solution growth method, a SiC single crystal is grown on the seed crystal by bringing the seed crystal attached to the lower end of the seed crystal shaft into contact with the Si—C solution contained in the crucible. The Si—C solution refers to a solution in which carbon (C) is dissolved in Si or a Si alloy melt. [0003] In the solution growth method, the temperature of the area immediately below the contacted seed crystal in the Si-C solution (hereinafter, referred to as the vicinity area) is lower than that of other areas through heat removal by the seed crystal axis, etc. temperature. In this c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36
CPCC30B19/062C30B17/00C30B19/04C30B19/08C30B29/36
Inventor 楠一彦龟井一人关和明岸田豊森口晃治海藤宏志大黑宽典土井雅喜
Owner NIPPON STEEL CORP
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