A kind of manufacturing method of tft substrate, tft substrate and photomask

Abstract

The invention discloses a manufacturing method of a TFT substrate, the TFT substrate and a photomask. The method comprises the steps that a photoresist layer which comprises a first part and a second part arranged at the side edge of the first part and is laid on the TFT substrate is acquired; the first metal layer of the TFT substrate arranged below the photoresist layer is etched; the first part of the photoresist layer is enabled not to protrude out of the side edge of the etched first metal layer; and a semiconductor layer below the first metal layer is etched with the first part of the photoresist layer acting as the mask so that the side edge of the semiconductor layer is enabled not to protrude out of the side edge of the etched metal layer. With application of the method, exposing of the semiconductor layer can be obviously reduced so that the reliability of the TFT substrate can be enhanced.

Description

technical field [0001] The present application relates to the technical field of TFT substrates, in particular to a manufacturing method of a TFT substrate, a TFT substrate and a photomask. Background technique [0002] At present, thin film transistor (Thin Film Transistor, TFT) substrates are generally manufactured using a 4-pass photomask (4Mask) process, which specifically includes: 1) exposing and developing the photoresist layer; 2) using the photoresist layer as a mask to etch the TFT substrate. The metal layer in the circuit area; 3) using the photoresist layer as a mask to etch the semiconductor layer in the non-circuit area, ashing the photoresist layer, and using the ashed photoresist layer as a mask to etch the metal layer and parts of the circuit area semiconductor layer to form a conductive channel; 4) peeling off the photoresist layer. [0003] However, the inventors of the present application have found in the long-term research and development that in the e...

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Problems solved by technology

[0003] However, the inventors of the present application have found in the long-term research and development that in the existing 4Mask process, when etching the metal layer in the non-circuit area of ​​the TFT substrate, a part of the metal layer will be etched away laterally, which will lead to etching The last semiconductor layer protrudes from the boundary of the metal layer, and the protruding semiconductor layer is exposed outside the metal layer. The exposed semiconductor part is easy to excite free electrons under the influence of light and heat, and the free electrons will reduce the TFT substrate. reliability

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