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Method and apparatus for nodule control in titanium-tungsten targets

A target and contract technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems affecting the quality of titanium-tungsten film, pollution, and formation on the sputtering surface of the target, etc.

Active Publication Date: 2020-04-10
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the inventors have observed that nodules may form on the sputtered face of the target when material from the central portion of the target is sputtered and redeposited on the outer peripheral edge of the target face rather than on the substrate
Also, nodules have a tendency to flake off and generate particles, which can contaminate and adversely affect the quality of the deposited titanium-tungsten film on the substrate

Method used

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  • Method and apparatus for nodule control in titanium-tungsten targets
  • Method and apparatus for nodule control in titanium-tungsten targets

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Embodiment Construction

[0013] Embodiments of the present disclosure include methods and apparatus for controlling nodule formation in a titanium-tungsten (TiW) target. In embodiments of the present disclosure, the formation of nodules on titanium-tungsten (Tiw) targets can be advantageously reduced, eliminated, or eliminated by control of the target raw material grain size and by an optional periodic cleaning process. virtually eliminated. In embodiments of the present disclosure, the target grain size control advantageously prevents or delays nodule formation, while the cleaning process advantageously removes any nodules generated on the surface of the target.

[0014] figure 1 A simplified, cross-sectional view of a physical vapor deposition (PVD) chamber 100 is depicted. PVD chamber 100 includes a substrate support 106 according to some embodiments of the present disclosure. Examples of PVD chambers suitable for modification in accordance with the teachings provided herein include chambers wit...

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Abstract

Embodiments of the present disclosure include methods and apparatus for controlling nodule formation in a titanium-tungsten (TiW) target. In some embodiments, the target material includes: a source material mainly comprising titanium (Ti) and tungsten (W), the source material being formed from a mixture of titanium powder and tungsten powder, wherein a major amount of titanium powder The grain size is less than or equal to the grain size of the main quantity of tungsten powder.

Description

technical field [0001] Embodiments of the present disclosure generally relate to substrate processing systems. Background technique [0002] Tungsten and titanium films are frequently used in the fabrication of semiconductor devices, for example, as diffusion barriers between silicon substrates and aluminum alloy metallizations. Titanium-tungsten (TiW) films are formed by sputtering a titanium-tungsten target. [0003] During the sputtering process, titanium-tungsten material is sputtered from the surface of the target and deposited onto a substrate disposed opposite the surface of the target. However, the inventors have observed that nodules may form on the sputtered face of the target when material from the central portion of the target is sputtered and redeposited on the outer peripheral edge of the target face rather than on the substrate. Also, nodules have a tendency to flake off and generate particles, which can contaminate and adversely affect the quality of the de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34H01J37/34
CPCC23C14/3414H01J37/3426H01J37/3429H01J37/3491B22F2998/10B22F1/09B22F3/02B22F3/10B22F2003/247C22C1/0458C22C14/00B22F2999/00C22C27/04B22F2202/13B22F3/12
Inventor 魏俊琪曹志涛欧岳生阿南塔克里希纳·朱普迪希兰库玛·萨万戴亚王欣斯里斯卡塔拉贾赫·西里纳瓦卡拉苏
Owner APPLIED MATERIALS INC
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