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A kind of in-plane read/write operation ferroelectric memristor and its preparation method

A memristor and write operation technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of rare physical realization, achieve good data retention characteristics, improve storage density, and increase write signal voltage.

Active Publication Date: 2020-09-01
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Limited by research conditions, real physical realizations are rare

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  • A kind of in-plane read/write operation ferroelectric memristor and its preparation method
  • A kind of in-plane read/write operation ferroelectric memristor and its preparation method
  • A kind of in-plane read/write operation ferroelectric memristor and its preparation method

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Embodiment Construction

[0047] The following introduces some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, but are not intended to identify key or decisive elements of the present invention or limit the scope of protection.

[0048] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.

[0049] In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferroelectric memristor is not limited to those shown in the accompanying drawings. Examples show directions.

[0050] figure 1 Shown is a schematic diagram of a three-dimensional structure of a ferroelectric memristor...

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Abstract

The invention belongs to the technical field of ferroelectric storage, in particular to a non-volatile ferroelectric memristor with in-plane read / write operation, a preparation method and an operation method thereof. The ferroelectric memristor includes a ferroelectric thin film layer and read-write electrode pairs arranged on the surface of the ferroelectric thin film layer, wherein the gap between the read-write electrode pairs is an irregular pattern, and the polarization of the electric domain of the ferroelectric thin film layer The direction is not parallel to the normal direction of the read-write electrode plane; when the write voltage operation is biased in a certain direction on the read-write electrode pair, different information can be stored with different write voltages. The ferroelectric memristor of the invention can realize non-destructive readout in current mode with continuous change of write voltage, is suitable for high-density application, and has simple preparation and low cost.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and in particular relates to a non-volatile ferroelectric memristor operated in a plane (or called a transverse direction) and a preparation method thereof, in particular to a gap between adjacent electrodes in a plane of Ferroelectric memristor with irregular pattern and its preparation method and operation method. Background technique [0002] At present, most of the commercial electronic device memories on the market are based on binary storage logic information ("0" or "1"). With the continuous advancement of Moore's Law, the size of the storage unit of the memory is getting smaller and the storage density is getting higher and higher. , The power consumption is getting lower and lower, but when the storage medium is close to the physical limit size, the memory is facing many insurmountable problems, such as serious leakage, failure of stored information, etc., which seriously h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11507
CPCH10B53/30
Inventor 江安全张岩白子龙
Owner FUDAN UNIV
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