Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Halftone mask plate

A halftone mask and aperture technology, which is applied in the field of display panel preparation, can solve the problems of uneven brightness, uneven brightness of lenses, reduce the transmittance of SubPS openings, etc., and achieve the effect of preventing uneven brightness

Active Publication Date: 2017-09-08
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF15 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a thin layer of metal C is plated on the opening of the Sub PS r (Chromium), which can reduce the transmittance of the Sub PS opening, and lead to a decrease in the CD value of the pattern size after exposure and development in the area with low Sub PS transmittance
like figure 1 As shown, but because the existing part of the exposure machine adopts a special mirror group splicing design, therefore, Mura (brightness unevenness) will occur at the splicing part 11 between two adjacent mirror groups 1, which is usually called Lens Mura (lens brightness). uneven)
Thus, using the halftone mask 2 (such as figure 1 (shown) when exposed, the SubPS height of the corresponding Lens Mura area will be significantly lower than the Sub PS height of the normal area, and when further combined into a screen, the brightness of the Lens Mura area will be different from that of other areas, resulting in Mura on the TFT-LCD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Halftone mask plate
  • Halftone mask plate
  • Halftone mask plate

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment

[0035] Coating photoresist on glass substrates such as image 3shown, and using the halftone mask of the present invention and the Nikon exposure machine, the exposure amount is 60 millijoules, and the aperture of each first opening 31 corresponding to the mirror group splicing part 11 of the exposure machine is located on the halftone mask. When the light transmittance is increased by 1 micrometer, the light transmittance is 15%, and the pattern size on the top of the auxiliary column spacer on the glass substrate will increase by about 0.6 micrometer. When the diameter of each first opening 31 corresponding to the halftone mask plate and the lens group splicing part 11 of the exposure machine is 9 microns, the light transmittance increases by 5% at the same time. The pattern size will increase by about 0.15 microns.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a halftone mask plate. The halftone mask plate comprises an opening area and a shading area, wherein the opening area comprises a plurality of partially transparent first openings and a plurality of fully transparent second openings; the calibers of the first openings are not exactly the same, and the light transmittance of the first openings are also not exactly the same, so that the size dimensions of exposed diagrams of the first openings are equal, the exposed diagrams of the first openings are auxiliary cylinder-shaped spacers, and the exposed diagrams of the second openings are main cylinder-shaped spacers. According to the halftone mask plate, a thin film transistor liquid crystal display can be prevented from generating un-uniform brightness, and is convenient to use.

Description

technical field [0001] The invention relates to a halftone mask, belonging to the technical field of display panel preparation. Background technique [0002] In the TFT-LCD (thin film transistor liquid crystal display) process, PS (Post Spacer; column spacer) is a key process of the color filter (color filter) layer. Exposure is an important process in the PS process, and a mask is a basic tool for exposure. Since there are generally two PSs with different heights, Main PS (main PS) and SubPS (sub PS) on a small-sized Panel (glass substrate), if two mask exposures are used to make Main PS and Sub PS respectively, it will lead to PS process. The production capacity is reduced by half, and it will also double the loss of materials such as photoresist and developer. Therefore, it is very necessary to use a Mask exposure to make Main PS and Sub PS. This kind of Mask is usually called Halftone Mask (halftone mask). [0003] The Halftone Mask technology reduces the light transm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/32G02F1/13
CPCG02F1/1303G03F1/32
Inventor 陈中明
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products